Electrical Breakdown in Vacuum
TAKAMISAWA, Kaizo, YAHAGI, Kichinosuke
openaire +2 more sources
Tailoring Phonon‐Driven Responses in α‐MoO3 through Isotopic Enrichment
ABSTRACT The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material, α‐MoO3, an orthorhombic crystal boasting three distinct phonon dispersions, provides three polaritonic dispersions of hyperbolic phonon polaritons (HPhPs) across the ...
Thiago S. Arnaud +31 more
wiley +1 more source
Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]
Pu T, Li X, Li L, Ao JP.
europepmc +1 more source
Super‐Resolution Ultrasound Based Cell Tracking With Polymeric Nanobubbles
This study presents a super‐resolution ultrasound platform for tracking cells in vivo. Biocompatible polymeric nanobubbles are used as highly echogenic intracellular labels. Following the injection of cells and microbubbles, ultrasound localization microscopy (ULM) can dynamically match the microvascular architecture and individual cell trajectories ...
Junlin Chen +19 more
wiley +1 more source
Study of Bending Strength Detection Method for SMC Composites Based on Laser-Induced Breakdown Spectroscopy. [PDF]
Wang H +5 more
europepmc +1 more source
On the Electric Breakdown of the Solutions
TORIYAMA, Y. +2 more
openaire +1 more source
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Breakthrough energy storage in medium-entropy superparaelectrics by triple synergy strategy. [PDF]
Liu Y +12 more
europepmc +1 more source
Mechanical Stress Evolution in Polycrystalline Ge Thin Films Under MeV Ion Irradiation
Irradiation of polycrystalline Ge thin films with 1.8 MeV Au ions alters residual stress through defect generation and lattice expansion. Increasing fluence drives progressive lattice disorder and eventual amorphization. Polycrystalline Ge resists amorphization longer than crystalline Ge, as grain boundaries facilitate defect diffusion, significantly ...
Karla J. Paz Corrales +10 more
wiley +1 more source
Influence of Shear-Induced Pre-Crosslinking on the Mechanical and Dielectric Properties of Crosslinked Polyethylene Cable Insulation. [PDF]
Jiang M, Wang X, Zhang R, Tian Z.
europepmc +1 more source

