Results 21 to 30 of about 308,095 (334)
GaN/Si Heterojunction VDMOS with High Breakdown Voltage and Low Specific On-Resistance
A novel VDMOS with the GaN/Si heterojunction (GaN/Si VDMOS) is proposed in this letter to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp) by Breakdown Point Transfer (BPT), which transfers the breakdown point from the high ...
Xin Yang, Baoxing Duan, Yintang Yang
doaj +1 more source
Parallel electric fields produced by ionospheric injection [PDF]
It is well known that there exists a thin layer in the lower boundary of the ionosphere between altitudes of 80 and 140 km in which collisional ions and collisionless electrons mix.
O. Saka
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Resistive switching induced by electronic avalanche breakdown in GaTa$_4$Se$_{8-x}$Te$_x$ narrow gap Mott Insulators [PDF]
Mott transitions induced by strong electric fields are receiving a growing interest. Recent theoretical proposals have focused on the Zener dielectric breakdown in Mott insulators, however experimental studies are still too scarce to conclude about the ...
Cario, Laurent+8 more
core +4 more sources
Due to the breakdown of the test-side fracture during the non-outage voltage-withstand test, the double-fracture disconnect switch (DDS) with a common chamber structure has been exposed to the risk of affecting the insulation performance of the operating-
Zifan DONG+5 more
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Poling of VDF/TrFe copolymers using a step-wise method [PDF]
A new poling technique is presented, in which a series of five consecutive pulses of electric field, and with successively increasing strength is applied between the two electrodes of 65/35 VDF/TrFE copolymer based sensor. Between each pulse, the applied
Binnie, T.D.+3 more
core +3 more sources
The widely distributed interconnects in printed circuit boards (PCBs) easily couple with high voltage under the action of electromagnetic pulses, which leads to insulation failure.
Quan Zhou+6 more
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Optimized Design of 1 700 V IGBT Field Limiting Ring and Field Plate Termination
The breakdown voltage is an important parameter for IGBT, and the breakdown voltage of the device is mainly related to the termination structure, so the research on the termination structure has always attracted attention.
Rongbin ZHOU+6 more
doaj
Laser-assisted guiding of electric discharges around objects [PDF]
Electric breakdown in air occurs for electric fields exceeding 34 kV/cm and results in a large current surge that propagates along unpredictable trajectories.
Chen, Z.+11 more
core +3 more sources
Abstract The process of formation of anodic electrical breakdown in the crystal structure of ice and liquid water is considered within the framework of the mechanism of generation of free charge carriers through interatomic Auger transitions in the valence band of the dielectric.
openaire +1 more source
A Comparison of Electrical Breakdown Models for Polyethylene Nanocomposites
The development of direct current high-voltage power cables requires insulating materials having excellent electrically insulation properties.
Zhaoliang Xing+5 more
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