Results 301 to 310 of about 320,999 (343)
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Electrical breakdown at semiconductor grain boundaries
Physical Review B, 1986Carrier transport through electrically active grain boundaries is studied under high-electric-field conditions. Electrons trapped at the interface and screened by ionized shallow and deep bulk defects are responsible for the formation of double Schottky barriers which reduce the carrier flow by several orders of magnitude.
, Blatter, , Greuter
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Electrical Breakdown in Vacuum
IEEE Transactions on Electrical Insulation, 1985In this paper vacuum breakdown phenomena are reviewed in two parts. The first considers the development of thought concerning electrical breakdown in vacuum with particular regard to field emission, interaction of cathode emission at the anode, and particle effects, including impurities.
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Electrical breakdown by tracking
Proceedings of the IEE - Part B: Electronic and Communication Engineering, 1962When an electrically stressed insulating material is exposed to conditions which contaminate its surfaces, the tendency for the resultant transient leakage currents to form conducting tracks on insulator surfaces is of recognized importance. This form of failure is known as tracking and the processes leading to its development are very dependent on the
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2023
Abstract The process of formation of anodic electrical breakdown in the crystal structure of ice and liquid water is considered within the framework of the mechanism of generation of free charge carriers through interatomic Auger transitions in the valence band of the dielectric.
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Abstract The process of formation of anodic electrical breakdown in the crystal structure of ice and liquid water is considered within the framework of the mechanism of generation of free charge carriers through interatomic Auger transitions in the valence band of the dielectric.
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Electrical Breakdown and the Breakdown Formalism
2022James U. Gleaton +4 more
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Physics Bulletin, 1974
J A Rees (ed) London: Macmillan 1973 pp ix + 294 price £7.95 For one's eight pounds one does not, as might be expected, get a heavy addition to the row of numerous, excellent texts on this important field. In fact Dr Rees has merely selected a number of pieces from its literature of the last three quarters of a century, with a page or so of commentary ...
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J A Rees (ed) London: Macmillan 1973 pp ix + 294 price £7.95 For one's eight pounds one does not, as might be expected, get a heavy addition to the row of numerous, excellent texts on this important field. In fact Dr Rees has merely selected a number of pieces from its literature of the last three quarters of a century, with a page or so of commentary ...
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Electrical Breakdown in Semiconductors
Physica Status Solidi (a), 1971Sudha Mahadevan, S. M. Hardas, G. Suryan
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Digest of Literature on Dielectrics Volume 34 1970, 1970
The chapter covers fundamental ionization processes in gases, mobility measurements, breakdown in uniform and nonuniform fields, laser induced breakdown, lightning, and applications of gas breakdown and gaseous insulation. A new section has been added to cover developments in the field of high pressure gas lasers, and the bibliography has been extended
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The chapter covers fundamental ionization processes in gases, mobility measurements, breakdown in uniform and nonuniform fields, laser induced breakdown, lightning, and applications of gas breakdown and gaseous insulation. A new section has been added to cover developments in the field of high pressure gas lasers, and the bibliography has been extended
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Nonsustained Breakdowns in Electrical Strength Tests
IEEE Transactions on Power Apparatus and Systems, 1966A study of nonsustained breakdowns has been made during alternating voltage tests on the electric strength of various commercial insulants in transformer oil and compressed sulphur hexafluoride and nitrogen. Such breakdowns do not cause sustained arcing and current flow.
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