Results 121 to 130 of about 131,396 (199)
Disentangling Bulk and Surface Contributions to Charge and Discharge Fading in High‐Voltage LiCoO2
High‐voltage operation of LiCoO2 accelerates capacity fading through bulk and surface degradation. By introducing a LiTaO3 coating to selectively suppress surface degradation, bulk and surface contributions to charge and discharge fading are decoupled.
Hyungjoon Moon +6 more
wiley +1 more source
A fully polymeric two‐dimensional array of Dielectric Elastomers enables self‐sensing, cooperative actuation, and large‐stroke operation in a DE‐based autonomous conveyor. Based only on voltage and current measurements at actuator level, the system detects the presence of a ball and subsequently drives it toward a target position.
Saverio Addario +6 more
wiley +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
A dynamically actuated reconfigurable topographical surface (DARTS) integrates contact‐mediated bactericidal nanotopography with programmable mechanical actuation to actively disrupt bacterial biofilms. Dynamic surface reconfiguration enhances bacterial killing and suppresses implant‐associated infections in vivo, providing a new strategy for active ...
Mohammad Asadi Tokmedash +4 more
wiley +1 more source
2D Co‐Assembly of Solid Acids Enables Stable Superprotonic Conduction Above 260°C
A two‐dimensional co‐assembly strategy integrates antimony phosphate and phosphotungstic acid nanosheets into free‐standing inorganic lamellar membranes with confined acid–acid interfaces. The resulting interfacial hydrogen‐bond network enables anhydrous proton conductivity exceeding 0.1 S cm−1 at 260°C and supports stable high‐temperature fuel‐cell ...
Qiuning Li +8 more
wiley +1 more source
Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering
This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle +14 more
wiley +1 more source
In this work, we use direct ink writing (DIW) to 3D print Bi2Te3‐based materials and naturally induce hierarchical functional nanostructures, which reduced the lattice thermal conductivity by half, resulting in high zT of 0.87and 0.89 in p‐type and n‐type compounds, respectively, competitive with commercial materials.
Liangwei Hu +12 more
wiley +1 more source
Polarity‐matched Zr–MOFs program Nafion's nanoscale morphology during solution casting. Hydrophilic UiO‐66 preserves hydrated pathways, while hydrophobic UiO‐67 increases the proton hopping sites by densifying ionic clusters. Combining both fillers yields a membrane that delivers 176 mS cm−1 conductivity, reaches 1.46 W cm−2 under 200 kPa, and triples ...
Yonghwi Cho +13 more
wiley +1 more source
A new phase‐change material encapsulated membrane offers more thermal resilience stability and safety than the conventional separators for batteries. ABSTRACT Thermal runaway in lithium‐ion batteries arises from the intrinsic coupling between heat generation and ion transport, yet conventional shutdown separators primarily rely on passive pore collapse
Sumedha Rajpoot +17 more
wiley +1 more source
Domain Engineering and Anisotropic Domain‐Wall Photovoltaic Effects in Ferroelectric SnS
The bulk photovoltaic effect at domain walls in the in‐plane ferroelectric 2D semiconductor SnS is investigated using periodic domain structures. Unlike conventional oxide ferroelectrics, domain walls of SnS do not contribute to photocurrent generation perpendicular to the domain walls.
Ryo Nanae +17 more
wiley +1 more source

