Results 61 to 70 of about 630,664 (285)
Influence of deep levels on the electrical transport properties of CdZnTeSe detectors
We investigated the influence of deep levels on the electrical transport properties of CdZnTeSe radiation detectors by comparing experimental data with numerical simulations based on simultaneous solution of drift-diffusion and Posisson equations ...
Dědič, V +6 more
core +1 more source
The corrosion performance of AlSi7Mg and AlSi10Mg alloys produced through selective laser melting (SLM) was examined under compressive stress in a chloride environment. Electrochemical analyses, including open‐circuit potential (OCP), potentiodynamic polarization (CPP), and electrochemical impedance spectroscopy (EIS), were complemented by scanning ...
Femi John Akinfolarin +2 more
wiley +1 more source
Electrical transport properties of (BN)-rich hexagonal (BN)C semiconductor alloys
The layer structured hexagonal boron nitride carbon semiconductor alloys, h-(BN)C, offer the unique abilities of bandgap engineering (from 0 for graphite to ∼6.4 eV for h-BN) and electrical conductivity control (from semi-metal for graphite to insulator ...
M. R. Uddin +5 more
doaj +1 more source
We have studied electrical transport and magnetic properties of epitaxial La_0.66 Sr_0.33 Mn O_3 thin films grown on different substrates having different lattice strains induced by different film-substrate lattice-mismatch. Both electrical transport and
Dey, Puja, Nath, T. K., Taraphder, A.
core +1 more source
This study demonstrates an efficient recycling route for out‐of‐spec AlSi10Mg atomized powders through compaction and arc remelting followed by suction casting. By correlating compaction load, cooling rate, and resulting microstructure, we show that intermediate pressures (50–80 kN) and rapid cooling refine dendrites, reduce porosity, and enhance ...
Mila Christy de Oliveira +4 more
wiley +1 more source
Electrical transport properties of Si-doped hexagonal boron nitride epilayers
The suitability of Si as an n-type dopant in hexagonal boron nitride (hBN) wide bandgap semiconductor has been investigated. Si doped hBN epilayers were grown via in-situ Si doping by metal organic chemical vapor deposition technique.
S. Majety +4 more
doaj +1 more source
The electrical conduction properties of G4-DNA are investigated using a hybrid approach, which combines electronic structure calculations, molecular dynamics (MD) simulations, and the formulation of an effective tight-binding model Hamiltonian.
Cuniberti, Gianaurelio +4 more
core +1 more source
This study examines how several molten high‐silicon electrical steels interact with both conventional and recycled MgO–C refractories. For this, various immersion experiments are conducted. In addition to infiltration, a number of mechanisms are identified and explained that control the corrosion of the refractory material.
Lukas Neubert +7 more
wiley +1 more source
Electrical Transport Properties of Multilayered Single-Walled Carbon Nanotube Films
An improved layer-by-layer vacuum filtration method was adopted for the fabrication of single-walled carbon nanotube (SWCNT) films aiming at a series of SWCNT films with controllable thickness and density.
Yanli Zhao, Wenzhi Li
doaj +1 more source
Magneto-Transport properties in the thin films of Charge ordered thin films
Thin films of Pr0.7Ca 0.3MnO3, Nd-0.5Ca0.5MnO3 and Nd0.5Sr0.5MnO3 have been fabricated. by pulse laser deposition. Magnetic and electrical transport properties of these films were compared with their bulk solids.
Das, I. +3 more
core +1 more source

