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Electrical Transport Properties of PbS Quantum Dot/Graphene Heterostructures [PDF]

Nanomaterials
The integration of PbS quantum dots (QDs) with graphene represents a notable advancement in enhancing the optoelectronic properties of quantum-dot-based devices. This study investigated the electrical transport properties of PbS quantum dot (QD)/graphene
Haosong Ying, Binbin Wei, Qing Zang, Jiduo Dong, Hao Zhang, Hao Tian, Chunheng Liu, Yang Liu   +7 more
doaj   +2 more sources

Size-Dependent Electrical Transport Properties in Conducting Diamond Nanostripes [PDF]

Nanomaterials, 2021
With the advances in nanofabrication technology, horizontally aligned and well-defined nitrogen-doped ultrananocrystalline diamond nanostripes can be fabricated with widths in the order of tens of nanometers.
Andrew F. Zhou, Elluz Pacheco, Badi Zhou, Peter X. Feng   +3 more
doaj   +2 more sources

Electrical Transport Interplay with Charge Density Waves, Magnetization, and Disorder Tuned by 2D van der Waals Interface Modification via Elemental Intercalation and Substitution in ZrTe₃, 2H-TaS₂, and Cr₂Si₂Te₆ Crystals [PDF]

Nanomaterials
Electrical transport in 2D materials exhibits unique behaviors due to reduced dimensionality, broken symmetries, and quantum confinement. It serves as both a sensitive probe for the emergence of coherent electronic phases and a tool to actively ...
Xiao Tong, Yu Liu, Xiangde Zhu, Hechang Lei, Cedomir Petrovic   +4 more
doaj   +2 more sources

Researach Paper: Investigation of Electronic and Transport Properties of Armchair and Zigzag β_12 Borophene Nanoribbon [PDF]

فیزیک کاربردی ایران, 2023
The electronic and transport properties of the zigzag and armchair borophene nanoribbons β12 with different edge geometries using the multi-band tight-binding model and Landauer Butticker formalism were investigated by the mode matching model.
Mohammad Reza Heidari Moghari, Rouhollah Farghadan   +1 more
doaj   +1 more source

Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect Of Single Crystalline Graphene Grown on Ge(110)

Advanced Materials Interfaces, 2023
The successful synthesis of wafer‐scale single crystalline graphene on semiconducting Ge substrate has been considered a significant breakthrough toward the manufacturing of graphene‐based electronic and photonic devices; however, the assumed extremely ...
Wang Guo, Miao Zhang, Zhongying Xue, Paul K. Chu, Yongfeng Mei, Ziao Tian, Zengfeng Di   +6 more
doaj   +1 more source

Symmetry-Engineering-Induced In-Plane Polarization Enhancement in Ta₂NiS₅/CrOCl van der Waals Heterostructure

Nanomaterials, 2023
Van der Waals (vdW) interfaces can be formed via layer stacking regardless of the lattice constant or symmetry of the individual building blocks. Herein, we constructed a vdW interface of layered Ta2NiS5 and CrOCl, which exhibited remarkably enhanced in ...
Yue Su, Peng Chen, Xiangrui Xu, Yufeng Zhang, Weiwei Cai, Gang Peng, Xueao Zhang, Chuyun Deng   +7 more
doaj   +1 more source

Structural and Transport Properties of 1T-VSe2 Single Crystal Under High Pressures

Frontiers in Materials, 2021
Two-dimensional transition metal dichalcogenide 1T-VSe2 exhibits a unique three-dimensional charge density wave (CDW) order below ∼110 K at ambient pressure, which shows unusual evolution under pressure. Here we report on the high-pressure structural and
Dongqi Song, Ying Zhou, Min Zhang, Xinyi He, Xinjian Li   +4 more
doaj   +1 more source

Electrical transport properties of focused ion beam lithography Au contacts on PbTiO3 nanorods [PDF]

Journal of Advanced Dielectrics, 2019
PbTiO3 nanorods with tetragonal phase were synthesized by hydrothermal method and heat treatment, and temperature-dependent electrical transport properties of individual PbTiO3 nanorod were investigated. The results show that the conductivities of PbTiO3
Jian Wang, Bin Chen, Heming Deng, Xiaojun Zhang, Xiaoguang Li, Yuancheng Cao, Yongming Hu   +6 more
doaj   +1 more source

Synthesis, structure, magnetic and half-metallic properties of Co2−xRuxMnSi (x = 0, 0.25, 0.5, 0.75, 1) compounds

IUCrJ, 2020
A series of Co2−xRuxMnSi (x = 0, 0.25, 0.5, 0.75, 1) Heusler compounds were successfully synthesized. The heat-treatment conditions were crucial to make the materials form a single phase with a Heusler structure.
H. P. Zhang, W. B. Liu, X. F. Dai, X. M. Zhang, H. Y. Liu, X. Yu, G. D. Liu   +6 more
doaj   +1 more source

Resistivity of Surface Steps in Bulk-Insulating Topological Insulators

Frontiers in Materials, 2022
Electron transport in topological insulators usually involves both topologically protected surface states and trivial electronic states in the bulk material.
Wonhee Ko, Saban Hus, Hoil Kim, Hoil Kim, Jun Sung Kim, Jun Sung Kim, Xiao-Guang Zhang, An-Ping Li   +7 more
doaj   +1 more source