Results 261 to 270 of about 235,295 (303)

Electro-thermal coupled analysis of MOSFET under IEMI

2018 International Applied Computational Electromagnetics Society Symposium - China (ACES), 2018
Analysis of MOSFET under intentionally electromagnetic interferences (IEMIs) has been taken by using the self-developed electro-thermal software since this external interferences have been blamed for unexplained breakdowns and burnouts of many vulnerable electronic circuits and systems.
Yong Li, Haiyan Xie, Jianguo Wang
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Electro-Thermal analysis of SiGe HBT under HPM Injection

2020 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO), 2020
In this paper, the failure of SiGe HBT is analyzed under high power microwave pulses. The transient simulation is conducted to obtain the temperature distributions and change of junction temperature with pulse injected. The calculated failure results are compared with measurement results which show close agreements.
Zhen Lu, Liang Zhou, Xiaofeng Hu
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Electro-thermal non-local vibration analysis of embedded DWBNNTs

Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science, 2011
In this article, electro-thermal transverse vibration behaviour of double-walled boron nitride nanotubes embedded in a surrounded elastic medium is investigated using non-local piezoelasticity cylindrical shell theory. The effects of the elastic medium including Winkler spring and Pasternak shear constants and van der Waals interaction between inner ...
A Ghorbanpour Arani, S Amir, A R Shajari, M R Mozdianfard, Z Khoddami Maraghi, M Mohammadimehr   +5 more
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Comprehensive electro-thermal(ET) analysis with considering ET coupling

2011 9th IEEE International Conference on ASIC, 2011
Temperature and supply voltage directly influence IC performance and reliability. Thus electro-thermal(ET) analysis including power/ground(P/G) analysis and thermal analysis is very important in IC design. But present ET analysis is simply implemented because P/G analysis doesn't consider temperature changes and thermal analysis always assume supply ...
null Huang Kun, null Zhao Guoxing, null Yang Xu, Zuying Luo   +3 more
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A new diode model formulation for electro-thermal analysis

ISCAS'99. Proceedings of the 1999 IEEE International Symposium on Circuits and Systems VLSI (Cat. No.99CH36349), 2003
Thermal effects due to the self heating of semiconductor devices is efficiently included in electrical simulators adding an equivalent RC network that models the thermal phenomenon. In this paper we consider the numerical problems that arise in the electro-thermal simulation of circuits containing strongly heating diodes.
D. D'Amore, P. Maffezzoni
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Quality Analysis of Ceramic Insulators Under Electro Thermal Stresses

2019 International Conference on High Voltage Engineering and Technology (ICHVET), 2019
The insulators used in power transmission and distribution networks are expected to withstand continuous electrical, mechanical and thermal stresses under different environmental factors. These stresses may reduce their performances such as surface resistance, flash over voltage and puncture strength.
K. Marimuthu, S. Vynatheya, N. Vasudev, P. Raja   +3 more
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Electro-thermal and mechanical analysis of a MEMS switch

International Conference on Electrical & Computer Engineering (ICECE 2010), 2010
Micro electro mechanical systems (MEMS) have experienced an explosive growth over the past few years driven mainly by its physical properties and its promising technological applications in many different fields, particularly in space and Radio Frequency (RF) systems. MEMS technology exhibits greater advantages over the existing semiconductor switches.
Md. Asaduzzaman, Soren Peik, M.S.R. Shoaib   +2 more
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Localized statistical 3D thermal analysis considering Electro-Thermal coupling

2009 IEEE International Symposium on Circuits and Systems, 2009
In this paper, we propose a novel method for analyzing fewer hot spots in a chip. The method, called SNSOR (Single-Node Successive Over Relaxation), is based on a novel localized relaxed iterative approach to perform statistical analysis on one hot spot at a time.
null Zuying Luo, Jeffrey Fan, Sheldon X.-D. Tan   +2 more
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Electro-thermal loss analysis of the 3L-ANPC converter

2014 IEEE 5th International Symposium on Power Electronics for Distributed Generation Systems (PEDG), 2014
The three-level active-neutral-point-clamped (3L-ANPC) voltage source converter (VSC) is used to overcome the uneven loss distribution. In 3L-ANPC VSC the dissipation in the power device is typically characterized by Sinusoidal Pulse Width Modulation (SPWM).
null Long Cheng, null Quan Chen, null Guoli Li, null Cungang Hu, null Changbao Zheng, null Guanghui Fang   +5 more
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Electro-thermal and quantum analysis of CNT-based interconnections

2017 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2017
Due to the rapid increases in current densities, wires, planar conductors and ground lines, become more and more vulnerable to electromigration. Future RF advanced packaging applications require new materials endowed of low electrical resistance, high reliability, chip-to-package interconnects, and improved thermal management.
Mencarelli, Davide, Stocchi, Matteo, Pierantoni, Luca   +2 more
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