Results 201 to 210 of about 201,891 (329)

3D Digital Light Processing of Redox‐Active Polymers for Electrochemical Applications

open access: yesAdvanced Functional Materials, EarlyView.
3D printing of electrochemically switchable conducting polymers is achieved by Digital Light Processing of redox‐active carbazole‐based polymer materials. Complex 2D and 3D architectures including dot arrays and pyramids clearly show the potential for novel 3D switchable electrochemical devices for sensors, electrochromic displays as well as 3D printed
Christian Delavier   +4 more
wiley   +1 more source

A Solvent‐Free, Dry‐Processed Li‐Ion Battery Enabled by Dual Binders and Nanostructured Aluminum Current Collectors

open access: yesAdvanced Functional Materials, EarlyView.
A dual‐binder dry‐processed electrode (DB‐DPE) combining PTFE and PVDF with a nanostructured Al current collector (NSA) forms a mechanically interlocked interface that significantly improves adhesion and reduces interfacial resistance. With an active material content as high as 96 wt.%, the NSA‐based DB‐DPE enables high‐mass‐loading operation (12.5 mAh
Seok Yun Kim   +4 more
wiley   +1 more source

Solvent‐Free Bonding Mechanisms and Microstructure Engineering in Dry Electrode Technology for Lithium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Dry electrode technology revolutionizes battery manufacturing by eliminating toxic solvents and energy‐intensive drying. This work details two promising techniques: dry spray deposition and polymer fibrillation. How their unique solvent‐free bonding mechanisms create uniform microstructures for thicker, denser electrodes, boosting energy density and ...
Yuhao Liang   +7 more
wiley   +1 more source

Direct Copper Electrochemical Deposition on Ru-Based Substrates for Advanced Interconnects Target 30 nm and 1/2 Pitch Lines: From Coupon to Full-Wafer Experiments [PDF]

open access: bronze, 2011
Silvia Armini   +9 more
openalex   +1 more source

TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer [PDF]

open access: yes, 2011
Caymax, Matty   +9 more
core   +1 more source

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