Results 91 to 100 of about 704,286 (307)

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Electrochemical etching of silicon

The electrochemical etching is very used technique for semiconductor materials modification. Different structures which find applications in many fields (biotechnology, nanotechnology or electronics) can be prepared by this technique.
Vrzal, Pavel
core   +2 more sources

Transactions of the American Electrochemical Society.

, 1902
Vols. for -1930 published: New York City.Mode of access: Internet.Vols. 1 (1902)-20 (1911). 1 v.; Vols. 21 (1912)-40 (1921).
American Electrochemical Society.
core  

Electrochemical Etching in the GaN-Based Technology

, 1998
In this study, both single undoped GaN epilayers and GaN-based device structures was treated by electrochemical etching in the dilute water solution of KOH or NaOH. Our investigations showed that in the undoped GaN epilayers grown by MOCVD the electrical
D. V. Sidorov, B. V. Pushnyi, W. V. Lundin, A. S. Usikov, V. G. Sidorov, A. G. Drizhuk   +5 more
core   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

Advanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

Investigation of nanoporous InP toward high-performance shortwave infrared (SWIR) surface emitting lasers [PDF]

AIP Advances
We demonstrate a conductivity-selective electrochemical etching method for indium phosphide (InP) that enables flexible control over pore morphology. By systematically varying the etching conditions, the resulting pore structures and evolution of pore ...
Chenziyi Mi, Jin-ho Kang, Bingjun Li, Hamza Thaalbi, Wei-Chih Lai, Supratik Dasgupta, Jung Han   +6 more
doaj   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

Advanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger, Maximilian M. Horn, Eva Röck, Diego Rosas Villalva, Lize Bynens, Jochen Vanderspikken, Christina Kousseff, Silène Gobeil, Olivier Bardagot, Nesibe Akmanşen‐Kalayci, Sarah H. Tolbert, Iain McCulloch, Wouter Maes, Demetra Tsokkou, Natalie Banerji   +14 more
wiley   +1 more source

An alternative process for silicon nanowire fabrication with SPL and wet etching system 

, 2020
[[abstract]]Silicon nanowire fabrication of nanoscale dimensions on a single-crystal silicon surface by scanning probe lithography (SPL) and potassium hydroxide (KOH) aqueous wet etching system has proven to be adequate technological processes. Using SPL
許鉦宗, Sheu, JT
core  

Electrochemical etching of n-type silicon based on carrier injection from a back side p-n junction

, 2003
A technique for electrochemical etching of n-type silicon in aqueous hydrofluoric acid is presented. This technique differs from photoelectrochemical etching because the holes (positive carriers) needed for the dissolution reaction to occur, are not ...
Badel, Xavier,, Linnros, Jan,
core   +1 more source

Precise Structural Control of GaN Porous Nanostructures Utilizing Anisotropic Electrochemical and Chemical Etching for the Optical and Photoelectrochemical Applications [PDF]

, 2017
A low-damaged wet process utilizing electrochemical (EC) etching and subsequent chemical etching has been developed for the fabrication of GaN porous structures.
Kumazaki, Yusuke, Satoru Matsumoto, Matsumoto, Satoru, Yusuke Kumazaki, Taketomo Sato, Sato, Taketomo   +5 more
core   +1 more source