Results 91 to 100 of about 958,796 (297)

Spin‐Split Edge States in Metal‐Supported Graphene Nanoislands Obtained by CVD

Advanced Materials, EarlyView.
Combining STM measurements and ab‐initio calculations, we show that zig‐zag edges in graphene nanoislands grown on Ni(111) by CVD retrieve their spin‐polarized edge states after intercalation of a few monolayers of Au. ABSTRACT Spin‐split states localized on zigzag edges have been predicted for different free‐standing graphene nanostructures.
Michele Gastaldo, Masoud Mansouri, Carlos Garcia‐Fernandez, Daniel Sánchez‐Portal, Aran Garcia‐Lekue, Gustavo Ceballos, Aitor Mugarza   +6 more
wiley   +1 more source

Performance Improvement of an STS304-Based Dispensing Needle via Electrochemical Etching. [PDF]

Micromachines (Basel), 2023
Kwon YT, Jeon S, Lee J, Kim J, Lee S, Kim H.   +5 more
europepmc   +1 more source

3D Anodic Alumina Nanoarchitectures: A Decade of Progress from Foundational Science to Functional Metamaterials

Advanced Materials, EarlyView.
Ordered three‐dimensional anodic aluminum oxide (3D‐AAO) nanoarchitectures with longitudinal and transverse pores enable architecture‐driven metamaterials. The review maps fabrication advances, including hybrid pulse anodization, and shows how 3D‐AAO templates tailor properties across magnetism, energy, catalysis, and sensing.
Marisol Martín‐González
wiley   +1 more source

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers. [PDF]

Sci Rep, 2023
Hochreiter A, Groß F, Möller MN, Krieger M, Weber HB.   +4 more
europepmc   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Fundamentals of MXene Synthesis Steps and Their Characterization Techniques: Morphological, Structural, and Electrochemical Properties

ChemElectroChem
MXene phases, a rapidly expanding family of two‐dimensional transition metal carbides, nitrides, and carbonitrides, have grown to include more than 80 compositions since their discovery in 2011, owing to their exceptional electrical conductivity, tunable
Yuksel Akinay, Mehmet Topuz, Erkan Karatas, Muhammet Enver Gokdemir, Tayfun Cetin, Safa Polat, Rashad Abaszade, Mukhtar Singh, Huseyn Imanov   +8 more
doaj   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Specific features of electrochemical polishing etch of single crystal silicon in a non-oxidizing etching agent

Тонкие химические технологии, 2012
Specific features of the electrochemical etching of single crystal n- and p-type silicon in a non-oxidizing etching reagent (< 12 vol. % of HF) were studied. Pulsation of voltage-time dependence of etching was found. The obtained results are explained
E. A. Shelonin, A. M. Kort, A. G. Yakovenko, A. A. Gvelesiani, E. N. Abramova   +4 more
doaj  

Vertical GaN p–n diode with deeply etched mesas by contactless photo-electrochemical etching

Applied Physics Express
GaN p–n diodes were fabricated by contactless photo-electrochemical (PEC) etching, and their electrical characteristics were evaluated. A high vertical etching rate of 80 nm min ^−1 , which is usable for device fabrication etching processes, was achieved
Hiroki Toyoda, Woong Kwon, Hirotaka Watanabe, Ryoko Tsukamoto, Yuta Furusawa, Yuta Itoh, Yoshio Honda, Hiroshi Amano   +7 more
doaj   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

Advanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source