Results 11 to 20 of about 17,130 (262)

Enhancing the specific capacitance of a porous silicon-based capacitor by embedding graphene combined with three-dimensional electrochemical etching

open access: yesElectrochemistry Communications, 2023
A porous silicon-based capacitive structure with high specific capacitance is fabricated by three-dimensional electrochemical etching. As well as conventional planar electrochemical etching in two dimensions on the surface of a silicon chip, the lateral ...
Jia-Chuan Lin   +4 more
doaj   +1 more source

Synthesis of Mo2C MXene with high electrochemical performance by alkali hydrothermal etching

open access: yesJournal of Advanced Ceramics, 2023
Two-dimensional MXenes are generally prepared by the etching of acid solutions. The as-synthesized MXenes are terminated by acid group anions (F–, Cl–, etc.), which affect the electrochemical performance of MXenes.
Yitong Guo   +6 more
doaj   +1 more source

Optical Properties of Porous Silicon Solar Cells for Use in Transport

open access: yesCommunications, 2019
Porous silicon (pSi) samples were prepared by electrochemical etching of p-type silicon (p-type Si) substrate. Three pSi samples with different parameters of electrochemical etching (electrical potential, etching time, etching current) were prepared and ...
Martin Kralik   +2 more
doaj   +1 more source

Enhancement of Porous Silicon Formation by Using Ultrasonic Vibrations [PDF]

open access: yesEngineering and Technology Journal, 2012
Anodic electrochemical etching enhanced by ultrasonically is developed to fabricate luminescent porous silicon (PS) material. The samples prepared by the new etching method exhibit superior characteristics to those prepared by conventional direct current
Ali H. Al-Hamdani
doaj   +1 more source

A Study on the O2 Plasma Etching Method of Spray-Formed SWCNT Films and Their Utilization as Electrodes for Electrochemical Sensors

open access: yesSensors, 2023
In this study, we analyzed the morphological changes and molecular structure changes on the surface of single-walled carbon nanotube (SWCNT) films during oxygen plasma (O2) etching of SWCNT surfaces formed by the spray method and analyzed their potential
Jinkyeong Kim   +2 more
doaj   +1 more source

Selective electrochemical etching of cantilever-type SOI-MEMS devices

open access: yesNanotechnology and Precision Engineering, 2022
It is possible to achieve selective electrochemical etching between different materials, such as p- and n-type silicon. However, achieving selective electrochemical etching on two different regions of the same p-type silicon material is a problem that ...
Xiuchun Hao, Peiling He, Xin Li
doaj   +1 more source

Macroporous Silicon Formation on Low-resistivity p-type c-Si Substrate by Metal-catalyzed Electrochemical Etching

open access: yesInternational Journal of Electrochemical Science, 2013
Macroporous silicon with large aperture size was fabricated on p-type c-Si substrate with the resistivity of about 0.1-3 ohm.cm by metal-catalyzed electrochemical etching (MCECE).
Zhaochen Li   +5 more
doaj   +1 more source

Development and Comparative Analysis of Electrochemically Etched Tungsten Tips for Quartz Tuning Fork Sensor

open access: yesMicromachines, 2021
Quartz Tuning Fork (QTF) based sensors are used for Scanning Probe Microscopes (SPM), in particular for near-field scanning optical microscopy. Highly sharp Tungsten (W) tips with larger cone angles and less tip diameter are critical for SPM instead of ...
Ashfaq Ali   +7 more
doaj   +1 more source

Structural, Chemical and Morphological of Porous Silicon Produced by Electrochemical Etching [PDF]

open access: yesEngineering and Technology Journal, 2012
In this paper, the nanocrystalline porous silicon (PS) films is prepared by electrochemical etching of p-type silicon wafer with different currents density (15 and 30 mA/cm2) and etching times on the formation nano-sized pore array with a dimension of ...
Amna A. Salman   +2 more
doaj   +1 more source

Porous GaP Multilayers Formed by Electrochemical Etching [PDF]

open access: yesElectrochemical and Solid-State Letters, 2002
The properties of porous GaP, formed by anodic etching in H 2 SO 4 , are described. Pore size, pore density, and the interpore distance depend on the dopant density and the potential at which the sample is etched. In addition, it is shown that at high potential, the GaP passivates as a result of the formation of an oxide layer.
Tjerkstra, R.W.   +3 more
openaire   +4 more sources

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