Results 201 to 210 of about 17,130 (262)
Some of the next articles are maybe not open access.
Electrochimica Acta, 1983
Silver faces with only a few exactly known dislocation emergence points were etched electrochemically. Deep pyramidal etch pits were observed on the screw dislocations whereas flat-bottomed pits arise on the edge dislocations. Qualitatively, this fact corresponds to the results obtained with natural, i.e. as-grown from the vapour phase, {0001}-faces of
Chr Nanev, K. Dicheva
openaire +1 more source
Silver faces with only a few exactly known dislocation emergence points were etched electrochemically. Deep pyramidal etch pits were observed on the screw dislocations whereas flat-bottomed pits arise on the edge dislocations. Qualitatively, this fact corresponds to the results obtained with natural, i.e. as-grown from the vapour phase, {0001}-faces of
Chr Nanev, K. Dicheva
openaire +1 more source
Metal-assisted electrochemical etching of silicon
Nanotechnology, 2010In this paper the metal-assisted electrochemical etching of silicon is introduced. By electrochemical measurement and sequent simulation, it is revealed that the potential of the valence band maximum at the silicon/metal interface is more negative than that of the silicon/electrolyte interface.
Z P, Huang +4 more
openaire +2 more sources
Electrochemical etching of CR-39
Nuclear Tracks, 1981ABSTRACT An extensive study of the ECE of CR-39 has been carried out. The influence of various parameters such as temperature, reagent concentration, frequency, field strength, pre-etching… is reported.
Lferde, Z., Monnin, M.
openaire +2 more sources
Electrochemical pore etching in Ge
Materials Science in Semiconductor Processing, 2006Abstract While electrochemical pore etching in semiconductors has become a thriving field for research and applications in the past 15 years or so, little work has been done in Ge. Besides Si, Ge is the only semiconductor with a minority carrier diffusion length large enough to enable the use of backside illumination, which has proved to be the ...
F. Cheng, J. Carstensen, H. Föll
openaire +1 more source
Hexagonal GaN nanostructure via electrochemical etching
Experimental and Theoretical NANOTECHNOLOGY, 2022Gallium nitride GaN thin films were deposited on Si (111) substrates using electrochemical deposition technique at 20 °C. SEM images and EDX results indicated that the growth of GaN films varies with the current density. XRD and Raman analyses showed the presence of hexagonal wurtzite and cubic zinc blende GaN phases with the crystallite size around 18 ...
null W. Cao, null Y. Chai
openaire +2 more sources
Electrochemical Etching of Crystalline Quartz
Electrochemical and Solid-State Letters, 2009We present a method to electrochemically etch crystalline quartz. Electrochemical etching has not been previously explored as a method for processing quartz because of its insulating nature. By injecting energetic charge carriers into the quartz it can be made temporarily conductive, allowing currents which will affect the chemical etch rate.
E. Rodrigue, V. Kaajakari
openaire +1 more source
Electrochemical pore etching in germanium
Journal of Electroanalytical Chemistry, 2006Abstract Nucleation and growth of electrochemically etched pores in Germanium (Ge) was investigated for n- and p-type Ge single crystals with {1 0 0}, {1 1 0}, and {1 1 1} orientations and doping concentrations of (10 14 –10 18 ) cm −3 . Various types of electrolytes, illumination conditions (front side, back side or none), and pre-treatments for ...
C. Fang, H. Föll, J. Carstensen
openaire +1 more source
Electrochemical etching of silicon carbide
Journal of Solid State Electrochemistry, 1999Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.3 ± 0.5 elementary charge per SiC molecule was determined.
Horst Sadowski +2 more
openaire +1 more source