Results 201 to 210 of about 17,804 (263)

Electrochemical etching of CR-39

Nuclear Tracks, 1981
ABSTRACT An extensive study of the ECE of CR-39 has been carried out. The influence of various parameters such as temperature, reagent concentration, frequency, field strength, pre-etching… is reported.
Lferde, Z., Monnin, M.
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The Electrochemical Etching of Metals

Journal of Electrochemistry, 2002
All kinds of current methods for etching metals are reviewed. The electrochemical etching methods among them, including through-mask, scanning electrochemical microscopy, confined etchant layer technique, electrochemical scanning tunneling microscopy and super-short potential pulse, are discussed in detail.
Li-min JIANG, Zhong-qun TIAN, Zhu-fang LIU, Bin-wei MAO, Hai-gou HUANG, Jian-jun SUN   +5 more
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An investigation of the electrochemical etching of

IEEE 4th Technical Digest on Solid-State Sensor and Actuator Workshop, 1990
Results from an investigation of the electrochemical etching of silicon in KOH:H/sub 2/O and CsOH:H/sub 2/O solutions are presented. Current versus voltage (I-V) scans were performed on both n- and p-type silicon as a function of etchant concentration (20-60% by weight KOH and 25-70% by weight CsOH) and temperature (25-80 degrees C). Voltage scans were
V.M. McNeil, S.S. Wang, K.-Y. Ng, M.A. Schmidt   +3 more
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Metal-assisted electrochemical etching of silicon

Nanotechnology, 2010
In this paper the metal-assisted electrochemical etching of silicon is introduced. By electrochemical measurement and sequent simulation, it is revealed that the potential of the valence band maximum at the silicon/metal interface is more negative than that of the silicon/electrolyte interface.
Z P, Huang, N, Geyer, L F, Liu, M Y, Li, P, Zhong   +4 more
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Electrochemical etching and CV‐profiling of GaN

physica status solidi (c), 2004
We report on the implementation of a robust and reproducible electrochemical CV (ECV) characterization for the (Al,In)GaN material system. A Schottky-like contact is formed by electrolyte, wetting the area of the semiconductor surface delimited by a sealing ring.
T. Wolff, M. Rapp, T. Rotter
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Electrochemical etching of full crowns

Australian Dental Journal, 1983
Abstract— The orientation of full crowns in an electrolytic bath during electrochemical etching influences the amount of gold alloy removal. The etching was non‐uniform and the amount removed not proportional with time.
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Electrochemical etching of macropores in silicon with grooved etch seeds

Semiconductors, 2008
Specific features of macropore formation in n-Si with grooved etch seeds on the surface have been studied. In contrast to point nucleation centers, linear centers form a half-ordered lattice of pores: in the course of the self-organization process, pores randomly originate along the grooves and follow a prescribed period a across the grooves.
E. V. Astrova, A. A. Nechitaĭlov
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Electrochemical Etching of Silicon by Hydrazine

Journal of The Electrochemical Society, 1993
The anodic dissolution and passivation of n- and -type Si in different concentrations of hydrazine solution and etching temperatures were studied. During etching, performed at 70 and 90 o C, it was observed that the current-potential characteristics for both n- and p-type Si showed a current reduction after reaching a peak value.
Sundaram, K. B., Chang, Hsiao Wei
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Electrochemical etching of silicon carbide

Journal of Solid State Electrochemistry, 1999
Both n- and p-type SiC of different doping levels were electrochemically etched by HF. The etch rate (up to 1.5 μm/min) and the surface morphology of p-type 6H-SiC were sensitive to the applied voltage and the HF concentration. The electrochemical valence of 6.3 ± 0.5 elementary charge per SiC molecule was determined.
Horst Sadowski, Reinhard Helbig, Stefan Rysy   +2 more
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Electrochemical pore etching in germanium

Journal of Electroanalytical Chemistry, 2006
Abstract Nucleation and growth of electrochemically etched pores in Germanium (Ge) was investigated for n- and p-type Ge single crystals with {1 0 0}, {1 1 0}, and {1 1 1} orientations and doping concentrations of (10 14 –10 18 ) cm −3 . Various types of electrolytes, illumination conditions (front side, back side or none), and pre-treatments for ...
C. Fang, H. Föll, J. Carstensen
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