Results 101 to 110 of about 48,277 (341)

Integrated Optoelectronic Model to Predict the External Quantum Efficiency of Single‐Layer TADF Organic Light‐Emitting Diodes

open access: yesAdvanced Electronic Materials, EarlyView.
An experimentally validated optoelectronic device model is presented to describe the efficiency and roll‐off behavior of single‐layer TADF OLEDs. By coupling charge transport, exciton dynamics, and optical outcoupling, the model reproduces the External Quantum Efficiency (EQE) across different emission layer thicknesses and temperatures, offering ...
Jawid Nikan   +4 more
wiley   +1 more source

Electroluminescence from porous silicon

open access: yes, 2022
The development of electroluminescence in porous silicon is reported.
Steiner, P., Lang, W., Kozlowski, F.
core  

Alcohol‐Adduct Mediated Precursor Stabilization Strategies for Conformal SnO2 Layers in Highly Efficient and Stable Perovskite Solar Modules

open access: yesAdvanced Energy Materials, EarlyView.
An alcohol‐adduct‐mediated strategy is employed to stabilize tin isopropoxide for the formation of a homogeneous double electron transport layer (ETL) incorporating SnO2 nanoparticles (NPs). This double‐ETL exhibits improved optical and charge‐transport properties due to reduced defect density and better energy level alignment, resulting in high ...
You‐Hyun Seo   +10 more
wiley   +1 more source

Ultraviolet-blue electroluminescence from Gd3Ga5O12 : Ag

open access: yes, 2000
UV-blue light was obtained from a thin-film electroluminescence device using Gd3Ga5O12:Ag as a light-emitting layer, which was deposited by using electron-beam evaporation.
Xu XR   +7 more
core  

Smart Exploration of Perovskite Photovoltaics: From AI Driven Discovery to Autonomous Laboratories

open access: yesAdvanced Energy Materials, EarlyView.
In this review, we summarize the fundamentals of AI in automated materials science, and review AI applications in perovskite solar cells. Then, we sum up recent progress in AI‐guided manufacturing optimization, and highlight AI‐driven high‐throughput and autonomous laboratories.
Wenning Chen   +4 more
wiley   +1 more source

Beyond Descriptor‐Based AI Design: Sp2‐Hybridized Branched Side Chains Enable Pre‐Aggregation–Driven Seeding Effects in Green‐Solvent‐Processed Organic Solar Cells

open access: yesAdvanced Energy Materials, EarlyView.
sp2‐hybridized branched side chains are introduced as a new molecular design for NFAs, YBOV, inducing strong solution‐state pre‐aggregation. This pre‐aggregation enables universal seeding motifs, highly ordered film growth, and overcoming the intrinsic current–voltage trade‐off, achieving 19.67% efficiency via green‐solvent processing beyond descriptor‐
Seokhwan Jeong   +14 more
wiley   +1 more source

Photovoltaic and electroluminescence characters in hybrid ZnO and conjugated polymer bulk heterojunction devices

open access: yes, 2007
We report electroluminescence in hybrid ZnO and conjugated polymer poly[2-methoxy-5-(3', 7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV) bulk heterojuriction photovoltaic cells.
Zhou HY (Zhou Hui-Ying)   +8 more
core  

Photo- and electroluminescence of new organic semiconductors

open access: yes, 2018
The results of investigation of the luminescence under photo- and electroexcitation for four new compounds are presented. The spectral properties and photoluminescence are studied in ethanol, chloroform solutions and in films formed by thermovacuum ...
Kaplunov, Mikhail G.   +19 more
core   +1 more source

A Kinetic–Energetic Bottleneck of Charge‐Transfer Injection Governs Energy Loss in Organic Solar Cells

open access: yesAdvanced Energy Materials, EarlyView.
Kinetic–energetic projection of time‐resolved photoluminescence reveals that charge‐transfer injection acts as a universal bottleneck in organic solar cells. A physics‐constrained Bayesian framework identifies an emergent effective CT injection rate governing the trade‐off between charge generation and nonradiative energy loss.
Rong Wang   +16 more
wiley   +1 more source

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

open access: yesIEEE Journal of the Electron Devices Society
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate.
Manuel Fregolent   +14 more
doaj   +1 more source

Home - About - Disclaimer - Privacy