Results 71 to 80 of about 48,277 (341)

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

Advanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi, Ho Jin Lee, Seok Hee Hong, Jae Seong Park, Chan Ho Ryu, Kyeong Heon Kim, Tukaram D. Dongale, Tae Geun Kim   +7 more
wiley   +1 more source

Plasmonic enhancement of electroluminescence [PDF]

AIP Advances, 2018
Here plasmonic effect specifically on electroluminescence (EL) is studied in terms of radiative and nonradiative decay rates for a dipole near a metal spherical nanoparticle (NP). Contribution from scattering is taken into account and is shown to play a decisive role in EL enhancement owing to pronounced size-dependent radiative decay enhancement and ...
Guzatov, D. V., Gaponenko, S. V., Demir, H. V.   +2 more
openaire   +5 more sources

Mitigating Efficiency Roll‐Off in Phosphor‐Sensitized Fluorescence OLEDs via Molecular Polarity‐Based Benzofuropyridine Host Engineering

Advanced Optical Materials, EarlyView.
Positional isomerism in dibenzofuran‐based n‐type hosts modulates molecular polarity, charge‐transport balance, and emissive‐layer packing. The higher‐polarity BFPDB‐2 host facilitates efficient energy funneling, reduced aggregation, and preferential dipole orientation, leading to phosphor‐sensitized fluorescence OLEDs with enhanced external quantum ...
Nargis Ali, Xuyao Song, Yun‐Hi Kim, Min Chul Suh   +3 more
wiley   +1 more source

Photo and electroluminescence of porous silicon layers

Bibechana, 2012
Porous silicon layers were prepared by both chemical and electrochemical methods on n- and ptype Si substrates. In the former technique, light emission was obtained from p-type and n-type samples.
E Haji-Ali
doaj   +1 more source

Three novel iridium (III) complexes containing double chiral atoms for organic light‐emitting diodes

Micro & Nano Letters, 2023
Chiral iridium (III) complexes are very important for the preparation of circularly polarized organic diodes light‐emitting diodes (CP‐OLEDs). Three novel iridium (III) complexes, Ir(dnfppy)2(Cl/pyrrole), Ir(dfppy)2(dpp), and Ir(tfmqz)2(sdpp), have been ...
Gan Cheng, Jun‐jian Lu, Li‐Ya Zhu, Guangzhao Lu   +3 more
doaj   +1 more source

Naphthyridine‐Based Donor–Acceptor Boron Difluoride Complexes Targeting Red Emission in Organic Light‐Emitting Diodes

Advanced Optical Materials, EarlyView.
Four donor–acceptor boron difluoride complexes based on triphenylamine donor and a naphthyridine acceptor units were synthesized, studied, and applied as OLED emitters. They exhibit pronounced intramolecular charge transfer character, balanced charge transport properties, and tunable emission. Near‐unity PLQYs are achieved for selected compounds, while
Omar Lahna, Stepan Kutsiy, Dmytro Volyniuk, Roman Luboradzki, Elina Andresen, Ute Resch‐Genger, Juozas V. Grazulevicius, Pavlo Stakhira, Mykhaylo A. Potopnyk   +8 more
wiley   +1 more source

Electroluminescent Sensing Coating for On-Line Detection of Zero-Value Insulators in High-Voltage Systems

Applied Sciences
In high-voltage transmission lines, insulators subjected to prolonged electromechanical stress are prone to zero-value defects, leading to insulation failure and posing significant risks to power grid reliability.
Yongjie Nie, Yihang Jiang, Pengju Wang, Daoyuan Chen, Yongsen Han, Jialiang Song, Yuanwei Zhu, Shengtao Li   +7 more
doaj   +1 more source

Reconsidering electroluminescence cooling of a heated diode

, 2023
Electroluminescence cooling of a heated infrared-emitting diode has been claimed [P. Santhanam, D. J. Gray, Jr., and R. J. Ram, Phys. Rev. Lett. 108, 097403 (2012)].
Alexander P Kirk
core   +1 more source

Surface‐Plasmon‐Coupled Blue InGaN/GaN Micro‐LEDs with Oxide–Metal–Oxide Capping Layer Compatible to Chip Fabrication Process

Advanced Optical Materials, EarlyView.
A sidewall‐integrated oxide–metal–oxide architecture is demonstrated to overcome efficiency degradation in ultra‐small InGaN/GaN micro‐LEDs. Conformal Al2O3 passivation combined with plasmonic Ag nanoparticles enables localized surface plasmon–exciton coupling, converting surface‐related nonradiative losses into radiative emission.
Pil‐Kyu Jang, Lee‐Woon Jang, Ohbin Kwon, Yeong‐Hoon Cho, Sangbum Kim, Sang‐Ik Lee, Seungjae Baek, Jiwon Park, Myeongjun Choi, Jaeseung Kim, Taehwan Kim, Sung‐Un Kim, Min‐Seok Lee, Yong‐Ho Ra, Ki Hoon Nam, Seung Min Kwak, Alexander Y. Polyakov, In‐Hwan Lee   +17 more
wiley   +1 more source

Automated Pipeline for Photovoltaic Module Electroluminescence Image Processing and Degradation Feature Classification

IEEE Journal of Photovoltaics, 2019
An automated data analysis pipeline is developed to preprocess electroluminescence (EL) module images, and parse the images into individual cells to be used as an input for machine learning algorithms.
A. M. Karimi, Justin S. Fada, Mohammad A. Hossain, Shuying Yang, T. Peshek, J. Braid, R. French   +6 more
semanticscholar   +1 more source