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Low Voltage Electron Beam Lithography
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1992Abstract : In order to measure the energy spread of electrons emitted from various negative electron affinity cathode structures, a simple apparatus using a uniform retarding field inside night vision tubes and customized tubes (all made by Intevac) was constructed and initial measurements performed.
R. F. Pease, R. Browning
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Electron beam array lithography
Journal of Vacuum Science and Technology, 1981Electron-beam array lithography (EBAL) uses array optics to expose 108 to 1010 resolution elements without mechanical motion. The array optics are based on the use of a first stage of deflection (coarse deflection) which selects one of an array of lenslets.
D. O. Smith, K. J. Harte
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Multiple electron-beam lithography
Microelectronic Engineering, 2001A number of multiple electron-beam approaches are currently under evaluation for sub-100-nm lithography. These approaches offer the potential of improving throughput for direct wafer writing and mask patterning and could have far reaching implications for the semiconductor industry.
Kim Y. Lee +3 more
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Contemporary Physics, 1981
Abstract Electron beam lithography means writing patterns in thin films of electron sensitive material using a finely focused (sub-micrometre diameter) electron beam. By combining electrical scanning with interferometrically monitored mechanical motion, very complex patterns can be generated with great accuracy; for example, a pattern containing one ...
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Abstract Electron beam lithography means writing patterns in thin films of electron sensitive material using a finely focused (sub-micrometre diameter) electron beam. By combining electrical scanning with interferometrically monitored mechanical motion, very complex patterns can be generated with great accuracy; for example, a pattern containing one ...
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Fabrication of micropolarizers by electron beam lithography
2016 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2016A method for the fabrication of micropolarizer arrays by electron beam lithography was presented. The experimental results have illustrated the influences of exposure dose on the performance parameters of wire grids. The maximum transmittance and extinction ratios of wire grid arrays were obtained in the visible spectrum and the comparison results of ...
Fan, Yinxue +4 more
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16th Design Automation Conference, 1979
Electron beam lithography is a rapidly maturing technology that has opened the realm of submicron design to the semiconductor device and circuit designer. This improved pattern resolution has already yielded devices and circuits exhibiting higher density, higher operating frequency, and lower operating power than has been possible with other ...
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Electron beam lithography is a rapidly maturing technology that has opened the realm of submicron design to the semiconductor device and circuit designer. This improved pattern resolution has already yielded devices and circuits exhibiting higher density, higher operating frequency, and lower operating power than has been possible with other ...
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Journal of Vacuum Science and Technology, 1982
Electron beam lithography has become the principal production method for fabricating integrated circuit masks and reticles for 1–1 projection printing and for direct step‐on‐wafer exposure. This has been the result of improved quality, lower cost, and high speed in writing patterns that are doubling in complexity every year.
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Electron beam lithography has become the principal production method for fabricating integrated circuit masks and reticles for 1–1 projection printing and for direct step‐on‐wafer exposure. This has been the result of improved quality, lower cost, and high speed in writing patterns that are doubling in complexity every year.
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Electron Beam Lithography [PDF]
, 1984 Over the past decade, the trend in integrated circuits for computers always has been a doubling of the circuit density every year. To-day’s products have 64.000 memory cells or 700 logic circuits on a 5 × 5 mm2 sized chip. For to-morrow, we can expect 288.000 and 516.000 memory cells or 5000 logic circuits on a chip.
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Electron beam photoresists for nanoimprint lithography
Microelectronic Engineering, 2002Abstract Polymer selection and critical dimension (CD) pattern uniformity across the wafer are key parameters for the nanoimprint lithography technique. This nanotechnology requires polymers having a low glass transition temperature (Tg) combined with a good etch resistance.
Gourgon, C., Perret, C., Micouin, G.
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Recent Developments In Electron Beam Lithography
SPIE Proceedings, 1987Electron beam pattern generators are nowadays used extensively for the production of masks and for direct writing on wafers. For obvious reasons electron beam pattern generators are optimized for integrated circuit fabrication. However there is also considerable potential for the use of electron beam lithography in other areas.
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