Results 301 to 310 of about 81,341 (318)

Cell projection electron-beam lithography

SPIE Proceedings, 1994
The HL-800D cell-projection e-beam lithography system was developed to meet the need for quarter-micron direct writing. It is the first commercially available cell projection system. Using the original HL-700 series concepts and Hitachi's more than 20 years of experience with HL-series manufacturing, most of the subsystems were redesigned.
Norio Saitou, Yoshio Sakitani
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Contrast limitations in electron-beam lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1999
State-of-the-art proximity effect correction (PEC) schemes show a degradation in contrast when they are applied to small features. It seems impossible to achieve a contrast better than that of the uncorrected pattern. In this article we provide mathematical proof that it is impossible to improve the contrast for the class of linear PEC kernels.
Richard L. Lozes, Richard E. Crandall, Uli Hofmann   +2 more
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Proximity correction for electron beam lithography

Optical Engineering, 1996
As the critical dimensions required in mask making and direct write by electron beam lithography become ever smaller, correction for proximity effects becomes increasingly important. Furthermore, the prob- lem is beset by the fact that only a positive energy dose can be applied with an electron beam.
Steven Chang, Christie R. K. Marrian, Martin C. Peckerar   +2 more
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Electron Beam Lithography-Tools and Applications

Japanese Journal of Applied Physics, 1991
This paper describes the categories of electron beam lithography tools which to us seem to be of most importance. The first is a thermal field emission source gaussian round beam system. The overall performance to accomplish 0.05 µm imaging capability is presented.
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Resolution limits for electron-beam lithography

IBM Journal of Research and Development, 1988
This paper discusses resolution limits for electron-beam fabrication. Electron beams have been used to produce structures 1 nm in size and useful devices with minimum features of about 20 nm. In all cases the resolution is set primarily by the range of the electron interaction phenomena that form the structures, and not by the size of the electron beam
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Electron Beam Lithography

2018
Toshio Ito, Ueno Takumi, Saburo Nonogaki
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Nanometric-Scale Electron Beam Lithography

1992
Publisher Summary This chapter focuses on electronbeam microlithography. Emphasis is on system design and the various ways of exploiting the interaction between focusing and deflecting fields. A comprehensive comparison of the various approaches is given, as well as a detailed study of the author's own contribution to the field, namely, the swinging ...
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Mathematical problems in electron beam lithography

1989
Electron beam lithography is a basic step in making chips. On January 27, 1989 P. Dean Gerber from IBM Thomas J. Watson Research Center (Yorktown Heights) explained the lithography steps and some of the mathematical issues which arise because of scattering effects. We describe these steps here and emphasize the mathematical questions.
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Simulation of electron-beam lithography

Cybernetics, 1989
E. N. Levchenko, V. P. Derkach, L. V. Starikova   +2 more
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Electron Beam Lithography of Nanostructures

2011
D.M. Tennant, A.R. Bleier
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