Results 71 to 80 of about 8,555 (215)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Dual-Material Electron Beam Selective Melting: Hardware Development and Validation Studies

open access: yesEngineering, 2015
Electron beam selective melting (EBSM) is an additive manufacturing technique that directly fabricates three-dimensional parts in a layerwise fashion by using an electron beam to scan and melt metal powder.
Chao Guo, Wenjun Ge, Feng Lin
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Surface chemistry in Ti-6Al-4V feedstock as influenced by powder reuse in electron beam additive manufacturing. [PDF]

open access: yesAppl Surf Sci, 2022
Derimow N   +5 more
europepmc   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Influence of the Coarse Grain Structure of a Titanium Alloy Ti-4Al-3V Formed by Wire-Feed Electron Beam Additive Manufacturing on Strain Inhomogeneities and Fracture. [PDF]

open access: yesMaterials (Basel), 2023
Klimenov V   +11 more
europepmc   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo   +10 more
wiley   +1 more source

Evaluation of Support Structure Removability for Additively Manufactured Ti6Al4V Overhangs via Electron Beam Melting

open access: yesMetals, 2019
The addition of support structures is essential for the successful fabrication of overhang structures through additive manufacturing (AM). The support structures protect the overhang portion from distortions. They are fabricated with the functional parts
Wadea Ameen   +2 more
doaj   +1 more source

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