Results 141 to 150 of about 18,795 (259)
Scalable Crackle‐Lithography for Multifunctional Enclosed Plastic Nanofluidic Devices
Advanced Science, EarlyView.Crackle‐lithography enables scalable fabrication of enclosed plastic‐substrate‐based nanofluidic devices with interconnected nanochannels that enable molecular transport, optical interrogation, confined electroless copper deposition, and ionic memristive behavior.
Tirumala Rao Dumpala +8 more
wiley +1 more source
Symmetry‐Imposed Selection Rules for Excitations of Nontrivial Plasmonic Topologies
Advanced Science, EarlyView.A unified group‐theory selection rule governs the excitation of vectorial nearfield topologies across three plasmonic spin states. Derived from first principles, it predicts spin–orbit vortex splitting and multidimensional nested vortices, confirmed by phase‐resolved in situ measurements.
Jie Yang +14 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley +1 more source
RRAM Variability Harvesting for CIM‐Integrated TRNG
Advanced Electronic Materials, EarlyView.This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende +4 more
wiley +1 more source
Fabrication of three-dimensional suspended, interlayered and hierarchical nanostructures by accuracy-improved electron beam lithography overlay. [PDF]
Sci Rep, 2017 Yoon G +5 more
europepmc +1 more source
Photoresponse Properties of Ambipolar Transport in WSe2 Field‐Effect Transistors
Advanced Electronic Materials, EarlyView.This study explores the photoresponse of WSe2 ambipolar field‐effect transistors, which exhibit unipolar, saturation, and ambipolar transport regions. Light illumination induces a shift of critical voltage with enhanced photocurrent generation driven by the photogating effect without the material degradation seen in avalanche photodetectors. This study
Jongeun Yoo +11 more
wiley +1 more source
Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses
Advanced Electronic Materials, EarlyView.A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj +3 more
wiley +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
Advanced Electronic Materials, EarlyView.This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Physical reservoir computing (PRC) based on spin wave interference has demonstrated high computational performance, yet room for improvement remains. In this study, we fabricated this concept PRC with eight detectors and evaluated the impact of the number of detectors using a chaotic time series prediction task.
Sota Hikasa +6 more
wiley +1 more source