Quantitative electron holography of biased semiconductor devices.
, 2002 Off-axis and in-line electron holography have been used to determine the electrical properties of a silicon p-n junction. Specimens were prepared for transmission electron microscopy (TEM) by focused ion beam (FIB) thinning and examined in a biasing ...
A C Twitchett +3 more
core
Improving Control Signals for Interference Gating [PDF]
BIO Web of ConferencesGaebel Simon +4 more
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Magnetic field observations in CoFeB/Ta layers with 0.67-nm resolution by electron holography. [PDF]
Sci Rep, 2017 Tanigaki T +12 more
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Off-Axis Electron Holography of In-Situ-Biased Highly-Doped p-AlGaAs/n-GaInP Junctions for Solar Cell Applications [PDF]
BIO Web of ConferencesMergner Vita +7 more
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Electron holography studies of the charge on dislocations in GaN
, 2002 The measurement of charge on dislocations in GaN by electron holography is described, Recent results are presented showing that edge dislocations in n-doped GaN are highly negatively charged, whereas those in p-doped GaN are positively charged, It is ...
Cai, J +4 more
core
Holography with an Extended Reference in Transmission Electron Microscopy [PDF]
BIO Web of ConferencesChao Wei +4 more
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Studying interface charge distribution in HfO2 and Al2O3 based nanocapacitors by operando electron holography [PDF]
BIO Web of ConferencesZhang Leifeng +6 more
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Imaging Chiral Spin Textures with Electron Interferometry and Polarimetry [PDF]
BIO Web of ConferencesMcMorran Benjamin +2 more
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Liquid Phase Transmission Electron Microscopy [PDF]
BIO Web of ConferencesLarsen Mads Søndergaard +5 more
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Arbitrary Total Angular Momentum Vectorial Holography Using Bi-Layer Metasurfaces. [PDF]
Adv MaterJung J, Kim H, Shin J.
europepmc +1 more source