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Electron paramagnetic resonance of electron-irradiated GaP
Physical Review B, 1981An electron paramagnetic resonance (EPR) study of electron-irradiated GaP is presented with emphasis on the properties of the isolated gallium vacancy which can be deduced from its EPR. Further confirmation of the assignment of this spectrum to the vacancy is presented with additional discussion of defect structure. Details of the optical excitation of
T. A. Kennedy, N. D. Wilsey
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Electron trapping in electron-beam irradiated SiO2
Journal of Applied Physics, 1978In addition to the well-known positive space charge, electron irradiation of MOS capacitors with 25-keV electrons is shown to introduce additional uncharged electron traps into the oxide layer. These traps persist after most of the positively charged defects have been removed by the usual low-temperature (? °C) anneals. Their presence after this anneal
J. M. Aitken, D. R. Young, K. Pan
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Electron Densitometer for Irradiation Studies in Electron Microscope
Review of Scientific Instruments, 1966A probe assembly is described which permits the use of an electron microscope to irradiate materials with low energy (50–150 keV) electrons. The electron beam current produced by the microscope can be monitored quickly and accurately with this unit so that the irradiation rate can be closely controlled.
T. P. Sciacca, A. G. Eubanks
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Impact of electron irradiation on electron holographic potentiometry
Applied Physics Letters, 2014While electron holography in the transmission electron microscope offers the possibility to measure maps of the electrostatic potential of semiconductors down to nanometer dimensions, these measurements are known to underestimate the absolute value of the potential, especially in GaN.
J. B. Park +7 more
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Electron spin resonance in electron-irradiated diamond
Philosophical Magazine, 1962Abstract The room temperature electron spin resonance spectrum of type IIa diamonds irradiated with 2 Mev electrons has been measured at a frequency of 9.5 kMc/s. The spectrum has been analysed into four systems, all of which show a g value within 0.2% of the free-spin value: A single isotropic line with a width of about 5 gauss.
E. A. Faulkner, Jenifer N. Lomer
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Strength and Electron Features of Irradiated Bone
Annals of Biomedical Engineering, 2001Radiation applied for therapy and diagnostics damages molecular/atomic couples of biotissues, bones being among them. As a result, electron peculiarities and mechanical behavior of the latter are altered. Correlation between strength of the irradiated bone and its electron features explored due to photo- and exoelectron emission measurements is ...
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Spectroscopy of electron irradiated polymers in electron microscope
Radiation Effects, 1981Abstract The damage induced by energetic electrons in the course of irradiation in transmission electron Microscope of Polymers were investigated spectroscopically. A number of site damage on molecular level have been detected at very low exposure dose.
S. H. Faraj, S. M. Salih
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Investigation of irradiation donors in electron irradiated CZ-Si
2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006Behavior of the irradiation donor (ID) after annealing in electron irradiated CZ-Si has been studied by using various kinds of experimental means and the effect of electron doses and oxygen concentration on the formation of ID is discussed. The changes in the resistivity and donor concentration induced by the electron irradiation have been studied ...
Lili Cai +5 more
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Defect studies in electron-irradiated ZnO and GaN
Physica B: Condensed Matter, 2007Abstract We present experimental results obtained with positron annihilation spectroscopy in room-temperature electron-irradiated n-type ZnO and GaN. The cation vacancies act as important compensating centers in 2 MeV electron-irradiated samples, even though their introduction rates are different by 2 orders of magnitude.
Look, David C. +2 more
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Lifetime Measurements on Electron Irradiated Silicon
Physica Status Solidi (a), 1981J. Kodes, J. Samek, T. Šimko
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