Results 261 to 270 of about 401,467 (301)
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Electron spin resonance in electron-irradiated diamond
Philosophical Magazine, 1962Abstract The room temperature electron spin resonance spectrum of type IIa diamonds irradiated with 2 Mev electrons has been measured at a frequency of 9.5 kMc/s. The spectrum has been analysed into four systems, all of which show a g value within 0.2% of the free-spin value: A single isotropic line with a width of about 5 gauss.
E. A. Faulkner, Jenifer N. Lomer
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Electron irradiation damage in magnesium
Acta Metallurgica, 1977Abstract In this paper the results of electron irradiation in thin foils of magnesium in a high voltage electron microscope are described. Elongated, non-basal perfect loops with Burgers vectors a 3 〈1120〉 are formed at room temperature. The loops are interstitial in nature.
M.K Hossain, L.M Brown
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Electron microscopy of irradiated BeO
Journal of Nuclear Materials, 1964Abstract Electron microscopy has been used to study the effects of nuclear irradiation on the microstructure of sintered BeO. The effects observed can be grouped into two categories, grain boundary separation, and gas bubble formation. Grain boundary separation occurs during low-temperature (~ 100° C) irradiations and has been correlated with ...
R.S. Wilks, F.J.P. Clarke
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Electron attachment in irradiated solutions
Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1964Transient absorption spectra have been obtained by pulsed radiolysis and flash spectroscopy of neutral and alkaline solutions of benzophenone under anaerobic conditions. These spectra demonstrate the formation of the ketyl radical ion (C 6 H 5 ) 2 Ċ—O -
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Integrative oncology: Addressing the global challenges of cancer prevention and treatment
Ca-A Cancer Journal for Clinicians, 2022Jun J Mao,, Msce +2 more
exaly
Irradiated Electronics Reliability Study
IEEE Transactions on Nuclear Science, 1976Chris Ashley, Bernd Deve
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Electron Irradiation of Indium Antimonide
Physical Review, 1959The effects of 4.5-Mev electron bombardment on the electrical properties of n- and p-type InSb are studied. Isochronal annealing experiments carried out on samples bombarded at 80 deg K indicate three regions of rapid annealing the first two between 80 and 200 deg K and the third near room temperature.
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Lifetime Measurements on Electron Irradiated Silicon
Physica Status Solidi (a), 1981J. Kodes, J. Samek, T. Šimko
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