Results 211 to 220 of about 889,780 (262)
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LOW TEMPERATURE ELECTRON MICROSCOPY

Annual Review of Biophysics and Bioengineering, 1981
In the investigation of biological ultrastructure by electron microscopy the most significant observation to date is a 1 nm repeat in the purple membrane of Halobacterium halobium (73). With a high degree of certainty, the spacing can be ascribed to the inter a-helical separation within bacteriorhodopsin molecules.
J, Dubochet   +4 more
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Electron Temperature Gradient Turbulence

Physical Review Letters, 2000
The first toroidal, gyrokinetic, electromagnetic simulations of small scale plasma turbulence are presented. The turbulence considered is driven by gradients in the electron temperature. It is found that electron temperature gradient (ETG) turbulence can induce experimentally relevant thermal losses in magnetic confinement fusion devices.
Dorland, W.   +3 more
openaire   +3 more sources

Low temperature electronics

Microelectronics Journal, 1988
Low temperature operation is being studied for electronic circuits and systems to improve speed, reduce noise and increase reliability. Reduced temperature operation results in improved performance from material related properties such as increased thermal and electrical conductivity and increased carrier mobility.
R.L. Anderson, J.L. Hill
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Local temperature in an electronic system

Physical Review A, 1996
It is argued that the most appropriate definition of the local temperature T(r) for the ground state of an electronic system is provided by the formula 3/2\ensuremath{\rho}(r)kT(r)=1/8${\ensuremath{\sum}}_{\mathit{i}}$[(\ensuremath{\nabla}${\mathrm{\ensuremath{\rho}}}_{\mathit{i}}$\ensuremath{\cdot}\ensuremath{\nabla}${\mathrm{\ensuremath{\rho}}}_ ...
, Nagy, , Parr, , Liu
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Superconducting Electronics at mK Temperatures

Journal of Low Temperature Physics, 2004
The interest in superconducting electronics working at millikelvin temperatures has increased during the past few years, and several novel devices and amplifiers utilizing mesoscopic Josephson junctions have been developed. We review the present status of a few of these devices, foremost the inductively-read superconducting Cooper pair transistor and ...
Hakonen, Pertti   +3 more
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Change of Electron Temperature in an Electron Beam

Journal of Applied Physics, 1953
The effect of electron encounters on the velocity distribution in an electron beam after passage through an accelerating grid is calculated by direct integration of the Boltzmann equation. It is found, with electron densities and velocities typical of traveling wave tubes and diodes, that the electron encounters have a negligible effect, that the ...
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Low-Temperature Electronics

Proceedings of the IRE, 1954
Considering potential practical applications of low-temperature phenomena, a general survey is made of the temperature dependence of noise and electrical resistance down to the region of Absolute Zero. It is shown that the signal-to-noise ratio in a metallic resistor can be increased by lowering its temperature, while cooling has little effect on ...
Clayton Swenson, Alfred Emslie
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Extreme temperature electronics

2004 IEEE Aerospace Conference Proceedings (IEEE Cat. No.04TH8720), 2004
In this paper a new class of electronic devices, called solid state vacuum devices (SSVDs), is presented and discussed with the primary focus aimed toward extreme environment applications. SSVDs, due to their intrinsic high temperature operation and radiation hardness, should be extremely well suited for extreme environments that exist both on Earth ...
L.P. Sadwick, R.J. Hwu, J.H. Chem
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Electron temperature in polar semiconductors

physica status solidi (b), 1968
AbstractUsing the electron temperature approximation an analysis is made of the scattering integral in an intense electric field for a semiconductor with an arbitrary non‐parabolic energy band. The electron temperature is then derived for a purely polar semiconductor with a non‐parabolic dispersion law such as n‐type InSb. The calculations only include
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