Results 21 to 30 of about 2,297,927 (297)

GaAs Quantum Dot Thermometry Using Direct Transport and Charge Sensing [PDF]

open access: yes, 2014
We present measurements of the electron temperature using gate defined quantum dots formed in a GaAs 2D electron gas in both direct transport and charge sensing mode.
Biesinger, D. E. F.   +7 more
core   +2 more sources

Plasma Ion Bombardment Induced Heat Flux on the Wafer Surface in Inductively Coupled Plasma Reactive Ion Etch

open access: yesApplied Sciences, 2023
Plasma plays an important role in semiconductor processes. With the recent miniaturization and integration, the control of plasma became essential for success in the critical dimension of a few nanometers and etch narrow and deep holes with their high ...
Sung Il Cho   +3 more
doaj   +1 more source

On the Electron Temperature in the Topside Ionosphere as Seen by Swarm Satellites, Incoherent Scatter Radars, and the International Reference Ionosphere Model

open access: yesRemote Sensing, 2021
The global statistical median behavior of the electron temperature (Te) in the topside ionosphere was investigated through in-situ data collected by Langmuir Probes on-board the European Space Agency Swarm satellites constellation from the beginning of ...
Alessio Pignalberi   +7 more
doaj   +1 more source

Transport Parameters and Dielectric Strength of Electrical Discharges in an Arc Discharges in Carbon Dioxide Gas

open access: yesZanco Journal of Pure and Applied Sciences, 2020
The two-term approximation solution of Boltzmann equation analysis has been used to calculate the electron energy distribution function (EEDF), dielectric strength and the electron swarm parameters in carbon dioxide.
idris salih
doaj   +1 more source

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

open access: yesIEEE Access, 2021
Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving material and processing technology. In this paper, a detailed analysis of gate–shaped AlGaN / GaN HEMT with field plate is presented. Although AlGaN /
Sushanta Bordoloi   +2 more
doaj   +1 more source

Calculation of temperature and density for dielectric- barrier discharge (DBD) plasma using COMSOL [PDF]

open access: yesمجله علوم و فنون هسته‌ای, 2020
In this paper, a one-dimensional simulation for discus plate dielectric barrier discharge (DBD) is done by COMSOL Multiphysics software. The effects of different parameters such as voltage, frequency, dielectric thickness, dielectric constant and ...
A Mazandarani   +4 more
doaj   +1 more source

Dephasing time in graphene due to interaction with flexural phonons [PDF]

open access: yes, 2014
We investigate decoherence of an electron in graphene caused by electron-flexural phonon interaction. We find out that flexural phonons can produce dephasing rate comparable to the electron-electron one.
Finkel'stein, Alexander M.   +2 more
core   +3 more sources

Electron temperature fluctuations in NGC 346 [PDF]

open access: yes, 2008
The existence and origin of large spatial temperature fluctuations in HII regions and planetary nebulae are assumed to explain the differences between the heavy element abundances inferred from collisionally excited and recombination lines, although this
A. C. Krabbe   +40 more
core   +2 more sources

Optical Emission Spectroscopic (OES) analysis for diagnostics of electron density and temperature in non-equilibrium argon plasma based on collisional-radiative model

open access: yesAdvances in Physics: X, 2019
This paper describes the use of Optical Emission Spectroscopy (OES) to measure electron densities and temperatures in non-equilibrium plasmas. The ways to interpret relative line-intensities of neutral argon atoms are evaluated based upon a collisional ...
Hiroshi Akatsuka
doaj   +1 more source

Electron Spin-Lattice Relaxation of doped Yb3+ ions in YBa2Cu3Ox

open access: yes, 2005
The electron spin-lattice relaxation (SLR) times T1 of Yb3+‡ ions were measured from the temperature dependence of electron spin resonance linewidth in Y0.99Yb0.01Ba2Cu3Ox with different oxygen contents.
Antipin   +18 more
core   +1 more source

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