Results 161 to 170 of about 1,261,639 (299)

Removing Oxide Layers and Retaining Oxide‐Free Steel Surfaces by Polishing in Oxygen‐Free Atmosphere

open access: yesAdvanced Engineering Materials, EarlyView.
In this study, the efficacy of wet mechanical polishing under an oxygen‐free atmosphere for deoxidation and the retention of an oxide‐free steel surface are elucidated using X‐ray photoelectron spectroscopy. The methodology proved successful; however, the results were highly dependent on the preparation of the solvents used to clean the samples after ...
Friedrich Bürger   +2 more
wiley   +1 more source

Electron Transport through a Tryptophan Quadruplex in a Dimeric Azurin Construct. [PDF]

open access: yesJ Phys Chem B
Melčák M   +5 more
europepmc   +1 more source

Influence of an Oxygen‐Free Atmosphere on Diamond‐Single‐Grain Scratching of Ti–6Al–4V

open access: yesAdvanced Engineering Materials, EarlyView.
Single‐grain scratching of Ti–6Al–4V is investigated under controlled, oxygen‐free, and ambient atmospheres using a novel experimental setup with in situ high‐speed imaging. The approach enables direct observation of chip formation and adhesion under suppressed oxidation.
Berend Denkena   +2 more
wiley   +1 more source

Population of Nonmetallic Inclusions in Liquid High‐Silicon Electrical Steel in Contact With MgO–C Refractories Based on Recyclates and Environmentally Friendly Binders

open access: yesAdvanced Engineering Materials, EarlyView.
The formation of nonmetallic inclusions (NMIs) was investigated in this study, carrying out immersion tests for 30 min at a temperature of 1600°C with liquid high‐silicon electrical steel (Si ≈ 3 mass‐%) and different MgO–C refractories. Conventional MgO–C refractories were considered, as well as MgO–C refractories containing MgO–C recyclate and ...
Lukas Neubert   +6 more
wiley   +1 more source

Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot [PDF]

open access: green, 2007
Nakul Shaji   +13 more
openalex   +1 more source

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