Results 231 to 240 of about 31,813 (297)

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

open access: yesAdvanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen   +9 more
wiley   +1 more source

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte   +9 more
wiley   +1 more source

Electronegativity and entropy design of layered oxides for sodium-ion batteries. [PDF]

open access: yesNat Commun
Gan L   +20 more
europepmc   +1 more source

Core and π‐Bridge Engineering to Deconstruct Y6‐Series into Modular Non‐Fused Acceptors: DFT‐Guided Structure‐Property Map for Organic Solar Cells

open access: yesAdvanced Electronic Materials, EarlyView.
The rigid fused backbone of Y6‐series acceptors is deconstructed into a modular, non‐fused A‐π‐A′‐π‐A architecture. Comprehensive quantum chemical simulations reveal that strategic core and π‐bridge engineering preserves strong near‐infrared light‐harvesting and enhances intramolecular charge‐transfer character.
Qurat ul Ain   +7 more
wiley   +1 more source

Decoupled Dielectric Optimization and YbOx Contact Engineering in All‐Spray‐Processed Oxide Thin‐Film Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Fully spray‐processed oxide thin‐film transistors are advanced by decoupling dielectric quality from contact energetics. Thermochemically densified MgO suppresses defect‐mediated leakage and improves electrostatic control, while an ultrathin YbOx interlayer induces a 1.67 eV work‐function shift that boosts mobility from ∼40 to ∼94 cm2 V−1 s−1.
Ahmed Mohamed   +5 more
wiley   +1 more source

Lattice Dynamics of van der Waals Layered Rhodium Chalcochlorides: Janus RhSeCl and 1.5-Dimensional RhTeCl. [PDF]

open access: yesInorg Chem
Schiemenz S   +10 more
europepmc   +1 more source

Stretchable Energy Storage with Eutectic Gallium Indium Alloy

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
A highly stretchable liquid metal‐based electrode is developed via a one‐step process, retaining conductivity and capacitance after mechanical deformation up to 900% strain. The stretchable all‐solid‐state device provides a areal energy density of 43 µWh cm⁻2 after 150% strain.
Adit Gupta   +6 more
wiley   +1 more source

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