Results 201 to 210 of about 654,854 (268)

Rational Fine‐Tuning of MOF Pore Metrics: Enhanced SO2 Capture and Sensing with Optimal Multi‐Site Interactions

Advanced Functional Materials, EarlyView.
A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing, Abdulrahman Mohabbat, István Boldog, Jens Möllmer, Marcus Lange, Yulyan Haiduk, Tobias Heinen, Vladimir Pankov, Oliver Weingart, Christoph Janiak   +9 more
wiley   +1 more source

Robotized Fabrication Strategy for Large-Scale 3D Conformal Electronics. [PDF]

Materials (Basel)
Ge J, Wu H, Wang H, Ye D.
europepmc   +1 more source

Correction: The auditory nerve implant-concept and device description of a novel electrical auditory prosthesis. [PDF]

Bioelectron Med
Lenarz T, Solzbacher F, Rieth L, Leber M, Adams ME, Salcher R, Warren DJ, Oxenham AJ, Dyballa KH, Samii A, Franklin RK, Nogueira W, Sondh I, Heiller AP, Crew JD, Huebner K, Strahl S, Holman HA, Johnson LA, Ghose GM, Thomas WM, Batsoulis C, Hochmair I, Feng L, Lim HH.   +24 more
europepmc   +1 more source

Ionogel-based flexible electronics. [PDF]

Natl Sci Rev
Liu Q, Ou X, Zhou Y, Yan F.
europepmc   +1 more source

Curvy Surface Reconstruction. [PDF]

Adv Sci (Weinh)
Shang C, Qi H, Wang Z, Meng K, Liu Z, Meng Z, Yang Y, Wang J, Jiang S.   +8 more
europepmc   +1 more source

Erratum for the Research Article "Large-scale smart bioreactor with fully integrated wireless multivariate sensors and electronics for long-term in situ monitoring of stem cell culture" by J. Lee <i>et al</i>.

Sci Adv
europepmc   +1 more source

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Electron-electron interaction in ballistic electron beams

Physical Review B, 1995
The transport of ballistic electrons emitted and detected by adjacent point contacts in a two-dimensional electron gas (2DEG) in the system GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As was measured at 1.2 K as a function of the emitter current.
, Müller, , Lengeler, , Schäpers, , Appenzeller, , Förster, , Klocke, , Lüth   +6 more
openaire   +2 more sources