Results 201 to 210 of about 213,514 (309)
Recent Progress in Technologies for Negatively Charging Droplets. [PDF]
Wang Z, Li Y, Yan W.
europepmc +1 more source
Time‐Resolved Magnetization Switching Dynamics Driven by Orbital Torques
Du et al. reveal nanosecond magnetization switching driven by orbital currents using time‐resolved Hall detection. The measurements separate domain nucleation from domain wall propagation and show that Joule heating strongly assists switching by lowering energy barriers.
Ao Du +4 more
wiley +1 more source
Polarisation Engineering in Covalent Organic Frameworks for Catalysis. [PDF]
Wang X +12 more
europepmc +1 more source
Bandgap‐engineered AlGaAs/GaAs heterostructures exhibit wavelength‐selective dual‐polarity photoelectrochemistry, switching from photocathodic to photoanodic response depending on excitation wavelength. The polarity transition is governed by band‐selective absorption, built‐in electric‐field‐driven carrier transport, and interfacial charge‐transfer ...
Yukai Mao +9 more
wiley +1 more source
Electrotunable Kapitza Resistance at Electrode-Water Interfaces: The Importance of Electrode Metallicity. [PDF]
Chapman A, Bresme F.
europepmc +1 more source
Propensities of Electrostatic Charge (Working Wear Preventing Electrostatic Charge).
openaire +1 more source
Diagnostic analysis via the heterojunction validation funnel. The funnel illustrates the hierarchical stratification of 30 reported Type‐II systems based on the three‐phase, seven‐step diagnostic framework. Complete validation through all phases is achieved by only 3.3% of systems, while 96.7% lack full mechanistic validation, revealing a pervasive ...
Ki‐Hyun Kim
wiley +1 more source
First-principles study of hydrogen-related defects at the a-SiO<sub>2</sub>/Si(100) interface. [PDF]
Luo H +6 more
europepmc +1 more source
Interface Effects in Ultrathin Silicon on Insulator Films
This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici +8 more
wiley +1 more source
Ferroelectric domain variants that are energetically equivalent are expected to remain preserved during polarization reversal. However, phase‐field simulations reveal that inclined domain walls in relaxor ferroelectrics can undergo irreversible elimination during alternating current poling through a proximity effect driven by long‐range elastic ...
Yuan‐Jie Sun +2 more
wiley +1 more source

