Results 201 to 210 of about 6,060,186 (281)

Large-scale energy budget of impulsive magnetic reconnection: Theory and simulation. [PDF]

open access: yesJ Geophys Res Space Phys, 2017
Kiehas SA   +5 more
europepmc   +1 more source

Atomic‐Scale Mechanisms of Anisotropic Thermal Decomposition in GeSn Alloys With Stepwise Pinning

open access: yesAdvanced Electronic Materials, EarlyView.
Combining in situ TEM with DFT calculations, this work elucidates atomic‐scale anisotropic thermal decomposition in GeSn films, identifying laminar receding in defect‐free regions and stepwise pinning at stacking faults. Driven by crystallographic anisotropy and defect‐mediated energetic penalties, these findings establish a physical framework for ...
YiXin Wang   +6 more
wiley   +1 more source

Strategies and Challenges in Memristor‐Selector Integration for High‐Density Memory and Compute‐in‐Memory Systems

open access: yesAdvanced Electronic Materials, EarlyView.
Selector integration enables scalable memristor crossbar arrays by suppressing sneak‐path currents and improving array selectivity. This review summarizes integration strategies, device requirements, challenges, and opportunities for high‐density memory, compute‐in‐memory, and neuromorphic computing systems.
Zohreh Hajiabadi   +3 more
wiley   +1 more source

Electrical Properties and Interfacial Strain in Thermally Oxidized 4H‐SiC MOS Structures Under Different Post‐Oxidation Annealing

open access: yesAdvanced Electronic Materials, EarlyView.
This work investigates the electrical properties and interfacial strain in thermally oxidized 4H‐SiC MOS structures under different post‐oxidation annealing. Nitrogen annealing simultaneously reduces interface state density and increases interfacial tensile strain, thus being accompanied by the formation of an interfacial dipole.
Fabrizio Roccaforte   +9 more
wiley   +1 more source

Metal Cation Chemistry and Amorphous Structure Governing Hydrogen Tolerance in Oxide Semiconductor Channels for 3D DRAM

open access: yesAdvanced Electronic Materials, EarlyView.
Amorphous In–Sn–Ga–O channels are presented as hydrogen‐tolerant oxide semiconductors for DRAM‐relevant thermal processes. Systematic comparisons of ternary oxides separate elemental and crystallinity effects under 400–600°C H2 annealing. Sn incorporation and amorphous structure suppress thickness loss and enable field‐effect transistors to retain ...
Seong‐Hwan Ryu   +5 more
wiley   +1 more source

Smart Exploration of Perovskite Photovoltaics: From AI Driven Discovery to Autonomous Laboratories

open access: yesAdvanced Energy Materials, EarlyView.
In this review, we summarize the fundamentals of AI in automated materials science, and review AI applications in perovskite solar cells. Then, we sum up recent progress in AI‐guided manufacturing optimization, and highlight AI‐driven high‐throughput and autonomous laboratories.
Wenning Chen   +4 more
wiley   +1 more source

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