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On-Chip ESD Protection: Design Innovation

IEEE Electron Devices Reviews
Electrostatic discharge (ESD) failure remains a major integrated circuit (IC) reliability challenge. Though devices being the foundational elements, on-chip ESD protection design is essentially a complex full-chip design task.
Weiquan Hao   +5 more
semanticscholar   +1 more source

On-Chip ESD Protection: Device Innovation

IEEE Electron Devices Reviews
Electrostatic discharge (ESD) failure is a major integrated circuit (IC) reliability problem. On-chip ESD protection has drawn continuous R&D efforts for decades and becomes increasingly challenging for modern chips at advanced technology nodes where ESD
Xunyu Li   +5 more
semanticscholar   +1 more source

Interconnects for device ESD protection

Proceedings Electrical Overstress/Electrostatic Discharge Symposium, 2005
A conductive spring loaded shorting bar on the leads of a TO-220 MOSFET was found to protect it from ESD failures. The MOSFET is used in an implantable cardioverter defibrillator device where quality and reliability is essential. Pre-production samples revealed significant ESD failures, thought to be associated with a mechanical shearing operation ...
T. Jarrett, B. Unger
openaire   +1 more source

A Gate-Grounded NMOS-Based Dual-Directional ESD Protection With High Holding Voltage for 12V Application

IEEE transactions on device and materials reliability, 2020
Dual-direction electrostatic discharge (ESD) protection devices can discharge both positive and negative ESD surges, owing to their excellent area efficiency.
Kyoung-Il Do, B. Song, Yong-Seo Koo
semanticscholar   +1 more source

Compact ESD Protection Design for CMOS Low-Noise Amplifier

IEEE Transactions on Electron Devices, 2020
A low-noise amplifier (LNA) is the input part of a radio frequency (RF) transceiver, which is vulnerable to electrostatic discharge (ESD). When ESD events occur, they may change the original characteristics of the LNA, such as gain decrease and noise ...
Chun-Yu Lin   +2 more
semanticscholar   +1 more source

RF/High-Speed I/O ESD Protection: Co-optimizing Strategy Between BEOL Capacitance and HBM Immunity in Advanced CMOS Process

IEEE Transactions on Electron Devices, 2020
In order to meet the requirement of ultrahigh-speed, low latency, and wide bandwidth (BW) in the next 5G mobile network and internet of things (IoT) applications, the parasitic capacitance specification of electrostatic discharge (ESD) protection devices
Wei-Min Wu   +5 more
semanticscholar   +1 more source

Novel devices in ESD protection

2007 International Workshop on Physics of Semiconductor Devices, 2007
ESD protection circuits are part of any electronic circuit to ensure robustness against electrical surges. The choice of the ESD protection concept strongly depends on the IO devices. The integration of devices like DeMOS for high voltage interfaces in system on chip applications and multigate FETs in advanced CMOS requires new process optimization ...
H. Gossner, J. Schneider
openaire   +1 more source

Design and Optimization of High-Failure-Current Dual-Direction SCR for Industrial-Level ESD Protection

IEEE transactions on power electronics, 2020
In an industrial-grade bus, transient voltage suppressor (TVS) devices that need to withstand inrush currents ensure electrostatic discharge (ESD) reliability of the core chip.
Yang Wang   +4 more
semanticscholar   +1 more source

Méthodologies de protection ESD

2018
Les défaillances induites par les décharges électrostatiques (ESD) constituent un problème majeur de fiabilité et de robustesse des circuits intégrés et des systèmes électroniques.Dans certaines applications comme celles de l’automobile, ce pourcentage peut être proche de 20 %.
Marise Bafleur   +2 more
openaire   +1 more source

Nonlinear capacitors for ESD protection

IEEE Electromagnetic Compatibility Magazine, 2012
In order to protect electronic products from Electrostatic Discharge (ESD) damage, multi-layer ceramic capacitors (MLCC) are often used to bypass the transient ESD energy. Most dielectric materials used in MLCC are nonlinear, since the dielectric constant decreases with increasing voltage, reducing the capacitance value, thus degrading the ESD ...
Hongyu Li   +5 more
openaire   +1 more source

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