Results 201 to 210 of about 2,049,776 (246)

Novel Nanophase-Switching ESD Protection

IEEE Electron Device Letters, 2011
This letter reports the proof-of-concept results for the new nontraditional nanophase-switching electrostatic-discharge (ESD) protection mechanism and nanocrossbar ESD structures. Experiment shows good ESD switching and protection, i.e., a fast response of 100 ps, a ultralow leakage of 0.26 pA, and an ESD protection of >; 267 V/μm2.
Lin Lin, Lijie Zhang, Xin Wang, Jian Liu, Hui Zhao, He Tang, Qiang Fang, Zitao Shi, Albert Wang, Ru Huang, Yuhua Cheng   +10 more
openaire   +1 more source

Design of a Gate Diode Triggered SCR for Dual-Direction High-Voltage ESD Protection

IEEE Electron Device Letters, 2019
A novel gate diode triggered silicon-controlled rectifier (GDTSCR) with dual-direction high-voltage (HV) electrostatic discharge (ESD) protection and a low snap-back voltage is proposed and investigated. Compared to conventional MOS triggered SCR (MTSCR),
Hailian Liang, Qiang Xu, Lingzhen Zhu, Xiaofeng Gu, Guipeng Sun, Feng Lin, Sen Zhang, Kui Xiao, Zhiguo Yu   +8 more
semanticscholar   +1 more source

Study on 4H-SiC GGNMOS Based ESD Protection Circuit With Low Trigger Voltage Using Gate-Body Floating Technique for 70-V Applications

IEEE Electron Device Letters, 2019
In this letter, we propose a 4H-SiC-based electrostatic discharge (ESD) protection circuitwith a new structure that has low on-resistance and good high-temperature characteristics while improving the high triggering voltage by applying an improved ...
Kyoung-Il Do, Byung-Seok Lee, Yong-Seo Koo   +2 more
semanticscholar   +1 more source

An Enhanced MLSCR Structure Suitable for ESD Protection in Advanced Epitaxial CMOS Technology

IEEE Transactions on Electron Devices, 2019
In this paper, an enhanced modified lateral silicon-controlled rectifier (EMLSCR) has been proposed and demonstrated. Compared with the traditional MLSCR, the EMLSCR possesses a lower trigger voltage of 7.0 V as well as a higher robustness, making it ...
Feibo Du, Fei Hou, Wenqiang Song, Ruibo Chen, Jizhi Liu, Zhiwei Liu, J. Liou   +6 more
semanticscholar   +1 more source

Augmented DTSCR With Fast Turn-On Speed for Nanoscale ESD Protection Applications

IEEE Transactions on Electron Devices, 2020
In this brief, two novel diode-triggered silicon-controlled rectifiers (DTSCRs) with fast turn-on speed have been presented. By embedding current gain amplifier modules (i.e., Sziklai pair and Darlington pair) into the conventional DTSCR, the current ...
Feibo Du, Wenqiang Song, Fei Hou, Jizhi Liu, Zhiwei Liu, J. Liou, Xuanlin Xiong, Qingsa Li, Yang Liu   +8 more
semanticscholar   +1 more source

ESD protection for BiCMOS circuits

Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124), 2002
We introduce two new ESD protection elements suitable for use in BiCMOS process technology-a grounded gate NMOS built inside a junction-isolated p-well which acts as a lateral NPN, and a modified Zener-triggered vertical NPN circuit.
S. Joshi, P. Juliano, E. Rosenbaum, G. Kaatz, null Sung-Mo Kang   +4 more
openaire   +1 more source

ESD protection circuit with an improved ESD capability for input or output circuit protection

48th Midwest Symposium on Circuits and Systems, 2005., 2005
An ESD protection circuit in chip level protection is proposed as the electrostatic discharge (ESD) clamping circuit such as thick field oxide (TFO), grounded gate MOS (GGNMOS) and separated stages for input or output protection. The ESD protection circuits for input pad and output pad were implemented from the proposed ESD protection circuit.
null Min Chul Jung, null Sang Joon Hawng, null Man Young Sung, null Ey Goo Kang   +3 more
openaire   +1 more source

Advanced ESD Protection

2006
In this chapter, several important advanced ESD protection design concepts are discussed. Modem mixed-signal and RF ICs require wide-angle considerations in ESD protection circuit design. The ESD-circuit interaction becomes an inevitable and critical issue in chip-level ESD protection design.
openaire   +1 more source

Broadband ESD protection circuits in CMOS technology

2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC., 2003
A broadband technique using monolithic T-coils is applied to electrostatic discharge (ESD) structures for both input and output pads. Fabricated in 0.18-/spl mu/m CMOS technology, the prototypes achieve operation at 10 Gb/s while providing a return loss of -20 dB at 10 GHz.
S. Galal, B. Razavi
openaire   +1 more source

Internal ESD transients in input protection circuits

27th Annual Proceedings., International Reliability Physics Symposium, 1989
The operation of a popular thick-field-device/grounded-gate transistor combination input protection circuit under electrostatic-discharge (ESD) stress is studied using a special test circuit. By monitoring internal voltages and currents, it was possible to observe how each element in the protection circuit contributed to the overall ESD protection.
Y. Fong, C. Hu
openaire   +1 more source