Results 211 to 220 of about 2,049,776 (246)
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Bidirectional silicon‐controlled rectifier for advanced ESD protection applications
Electronics Letters, 2019In this Letter, an enhanced bidirectional modified lateral silicon-controlled rectifier (EBMLSCR) is proposed for advanced dual-directional electrostatic discharge (ESD) protection applications.
Feibo Du +4 more
semanticscholar +1 more source
IEEE Electron Device Letters, 2019
A novel snapback-free silicon-controlled rectifier (SFSCR) with P-type Zener implantation (ZP) is developed in a 0.5- $\mu \text{m}$ bipolar CMOS DMOS technology for latch-up immune high-voltage (HV) electrostatic discharge (ESD) protection.
Zhao Qi +10 more
semanticscholar +1 more source
A novel snapback-free silicon-controlled rectifier (SFSCR) with P-type Zener implantation (ZP) is developed in a 0.5- $\mu \text{m}$ bipolar CMOS DMOS technology for latch-up immune high-voltage (HV) electrostatic discharge (ESD) protection.
Zhao Qi +10 more
semanticscholar +1 more source
2008
An electro-static discharge protection circuit including: a first input terminal and a second input terminal; a first output terminal coupled to the first input terminal, and a second output terminal coupled to the second input terminal; a first circuit branch connected between the first input terminal and the second input terminal, said first circuit ...
Giuseppe Consentino +3 more
openaire +1 more source
An electro-static discharge protection circuit including: a first input terminal and a second input terminal; a first output terminal coupled to the first input terminal, and a second output terminal coupled to the second input terminal; a first circuit branch connected between the first input terminal and the second input terminal, said first circuit ...
Giuseppe Consentino +3 more
openaire +1 more source
Power Management Circuits’ ESD Protection
2010This chapter discusses the applications of ESD network and clamp principles, using examples of different power management analog circuits. The trends in the application of integrated power products are discussed in Section 7.1. Then, a more detailed analysis of both the most common and the most “aggressive” ESD protection solutions is presented in the ...
Vladislav A. Vashchenko, Andrei Shibkov
openaire +1 more source
Innovative ESD protections for UTBB FD-SOI technology
2013 IEEE International Electron Devices Meeting, 2013We present an innovative set of UTBB (Ultra-Thin Body and BOX) ESD protection devices, which achieves remarkable performance in terms of leakage current and triggering control. Ultra-low leakage current below 0.1 pA/μm and adjustable triggering (1.1V
Solaro, Y. +9 more
openaire +2 more sources
IEEE Transactions on Electron Devices, 2019
This article presents device design insights and design challenges for drain-extended FinFET devices with embedded silicon-controlled rectifier (SCR) (DeFinFET-SCR), which can be used as an electrostatic discharge (ESD) protection device and a self ...
Milova Paul +5 more
semanticscholar +1 more source
This article presents device design insights and design challenges for drain-extended FinFET devices with embedded silicon-controlled rectifier (SCR) (DeFinFET-SCR), which can be used as an electrostatic discharge (ESD) protection device and a self ...
Milova Paul +5 more
semanticscholar +1 more source
On-Chip ESD detection circuit for system-level ESD protection design
2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010A new on-chip CR-based electrostatic discharge (ESD) detection circuit for system-level ESD protection design is proposed in this work. The circuit performance to detect positive or negative electrical transients generated by system-level ESD tests has been analyzed in HSPICE simulation and verified in silicon chip.
Ming-Dou Ker +5 more
openaire +1 more source
2015 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC), 2015
The purpose of this study is to support the countermeasure technology in the system level by using the developed observation system. It can observe a discharge current waveform, a discharge voltage waveform and a radiated electromagnetic waveform to make comparison of ESD protection effect between protective elements on electric devices and ESD ...
Takayoshi Ohtsu +3 more
openaire +1 more source
The purpose of this study is to support the countermeasure technology in the system level by using the developed observation system. It can observe a discharge current waveform, a discharge voltage waveform and a radiated electromagnetic waveform to make comparison of ESD protection effect between protective elements on electric devices and ESD ...
Takayoshi Ohtsu +3 more
openaire +1 more source
$\pi$ -SCR Device for Broadband ESD Protection in Low-Voltage CMOS Technology
IEEE Transactions on Electron Devices, 2019Electrostatic discharge (ESD) protection design is needed for integrated circuits; however, the ESD protection devices near the I/O pad may cause negative impacts on the high-frequency performance.
Chun-Yu Lin, Yu-Hsuan Lai
semanticscholar +1 more source
On-Chip Gate ESD Protection for AlGaN/GaN E-Mode Power HEMT Delivering >2kV HBM ESD Capability
IEEE Workshop on Wide Bandgap Power Devices and Applications, 2019In this work, we proposed an on-chip protection circuit to enhance the gate ESD robustness for the AlGaN/GaN E-mode power HEMT, based on the monolithic 8” GaN-on-Si technology platform.
C. Zhou +10 more
semanticscholar +1 more source

