Results 261 to 270 of about 110,116 (295)
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Etching kinetics of a self-etching primer
Biomaterials, 2002Self-etching primers are thought to offer significant advantages over total-etch adhesive systems. The hypothesis tested in this study was that there was no difference in etching characteristics between a self-etching primer and a phosphoric acid solution at the same pH.
Joan F. Hilton+3 more
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Preferential Etching and Etched Profile of GaAs
Journal of The Electrochemical Society, 1971The system has been found to give good results for preferential etching of . The etch rates for the low‐index planes of in this system have been investigated as a function of Br2 concentrations in .The order of the etch rate at 1% Br2 by weight has been found to be planes have been only slightl yetched.
Yasoo Harada, Yasuo Tarui, Yoshio Komiya
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Clinics in Plastic Surgery, 2020
Abdominal etching techniques are used to improve the aesthetics of the abdominal region, providing patients an athletic physique, using liposuction and fat redistribution. Based on the anatomy of fat layers, lipocontouring for deep fat liposuction and superficial fat liposculpting for superficial fat liposuction are proposed.
Ahmad, Saad+2 more
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Abdominal etching techniques are used to improve the aesthetics of the abdominal region, providing patients an athletic physique, using liposuction and fat redistribution. Based on the anatomy of fat layers, lipocontouring for deep fat liposuction and superficial fat liposculpting for superficial fat liposuction are proposed.
Ahmad, Saad+2 more
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Etching Efficacy of Self-Etching Functional Monomers
Journal of Dental Research, 2018Besides chemically interacting with hard tooth tissue, acidic functional monomers of self-etch adhesives should etch the prepared tooth surface to dissolve the smear layer and to provide surface micro-retention. Although the etching efficacy of functional monomers is commonly determined in terms of pH, the pH of adhesives cannot accurately be measured.
Noriyuki Nagaoka+5 more
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Aesthetic Plastic Surgery, 1997
The development of blunt liposuction by Illouz [1] in 1978 ushered in a new era in body sculpting. For the first time it had become possible to dependably remove large amounts of subcutaneous fat and decrease saddlebags and bulges to provide a smoother contour.
R A, Ersek, A V, Salisbury
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The development of blunt liposuction by Illouz [1] in 1978 ushered in a new era in body sculpting. For the first time it had become possible to dependably remove large amounts of subcutaneous fat and decrease saddlebags and bulges to provide a smoother contour.
R A, Ersek, A V, Salisbury
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Electrochimica Acta, 1983
Silver faces with only a few exactly known dislocation emergence points were etched electrochemically. Deep pyramidal etch pits were observed on the screw dislocations whereas flat-bottomed pits arise on the edge dislocations. Qualitatively, this fact corresponds to the results obtained with natural, i.e. as-grown from the vapour phase, {0001}-faces of
K. Dicheva, Chr. Nanev
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Silver faces with only a few exactly known dislocation emergence points were etched electrochemically. Deep pyramidal etch pits were observed on the screw dislocations whereas flat-bottomed pits arise on the edge dislocations. Qualitatively, this fact corresponds to the results obtained with natural, i.e. as-grown from the vapour phase, {0001}-faces of
K. Dicheva, Chr. Nanev
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1996
This chapter deals with laser-induced etching of element and compound semiconductors. An inspection of Appendix B.3 shows that the most detailed investigations on dry-etching have been performed for Si, GaAs, and InP. The precursor molecules mainly employed include halides and halogen compounds such as Cl2, HCl, XeF2, NF3, CCl4, CF3Br, CF3I, and SF6 ...
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This chapter deals with laser-induced etching of element and compound semiconductors. An inspection of Appendix B.3 shows that the most detailed investigations on dry-etching have been performed for Si, GaAs, and InP. The precursor molecules mainly employed include halides and halogen compounds such as Cl2, HCl, XeF2, NF3, CCl4, CF3Br, CF3I, and SF6 ...
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Etch mechanism and etch-induced effects in the inductively coupled plasma etching of GaN
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2003The inductively coupled plasma (ICP) processing of gallium nitride (GaN) using SF6/N2 and Cl2/Ar gas mixtures has been compared. ICP processing of GaN using SF6 and N2 mixture of 1:1 produces an optimized etch rate of 67 nm/min while five times higher etch rate of 314 nm/min is achieved using Cl2 and Ar mixture of 1:3.
B. Rong+3 more
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Chemical Etching of Silicon: IV . Etching Technology
Journal of The Electrochemical Society, 1976The etching of silicon in based systems proceeds by a sequential oxidation‐followed‐by‐dissolution process. In those composition regions where the solution is very low in and rich in , the rate‐limiting process is the oxidation step. Consequently, electron concentration, surface orientation, crystal defects, and catalysis by lower oxides of nitrogen ...
B. Schwartz, H. Robbins
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Dental Materials, 2009
Etch and resin infiltration morphologies were compared for three self-etch adhesive (SEA) systems and eleven model etch-and-rinse (ERA) systems using various phosphoric acid (PA) concentrations with Adper Single Bond Plus (SB) adhesive. Matches for the morphologies were made between each SEA system and one of the PA/SB systems and bond strength ...
Robert L. Erickson+2 more
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Etch and resin infiltration morphologies were compared for three self-etch adhesive (SEA) systems and eleven model etch-and-rinse (ERA) systems using various phosphoric acid (PA) concentrations with Adper Single Bond Plus (SB) adhesive. Matches for the morphologies were made between each SEA system and one of the PA/SB systems and bond strength ...
Robert L. Erickson+2 more
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