Results 241 to 250 of about 18,009 (279)
Some of the next articles are maybe not open access.
Microfabrication of Poly(tetrafluoroethylene) Using SR Direct Etching
IEEJ Transactions on Electronics, Information and Systems, 2009AbstractPolytetrafluoroethylene (PTFE) is a very attractive material for various fields because of its chemical resistance, insulation properties, and hydrophobic properties. However, it is difficult to fabricate PTFE microstructures with conventional techniques such as semiconductor processes or micromachining.
Shigeaki Yamamoto +3 more
openaire +1 more source
Microfabrication in LiNbO3 by ion-bombardment-enhanced etching
Journal of Vacuum Science and Technology, 1978Ion-bombardment-enhanced etching is suggested as an useful microfabrication technique for LiNbO3. Diluted HF was found to be a good selective etchant for a layer damaged by Ar+ and N+. This method is compared with another microfabrication method, ion beam etching. The accuracy of the pattern width by this method is better than that ion beam etching and
M. Kawabe +3 more
openaire +1 more source
Reactive ion etching of quartz and glasses for microfabrication
SPIE Proceedings, 1999The reactive ion etching (RIE) of quartz and of silica-based glasses (Suprasil 2, Herasil 2, BK7, LE, NA and soda-lime) has been examined in CF 4 /CHF 3 plasmas. The etch rate was shown to reduce strongly with an increasing percentage of non-volatile elements in the glass.
Patrick W. Leech, Geoffrey K. Reeves
openaire +1 more source
Laser-assisted wet chemical etching of metals for microfabrication
SPIE Proceedings, 1994Laser-induced wet chemical etching of Co, Cr, Cu and Ti in aqueous solutions of potassium hydroxide and phosphoric acid was investigated using an Ar-laser operating at 514 nm. Etching of thin metal films on glass substrates and metal foils was obtained at static etch rates up to about 10 micrometers /s at an incident laser power of about 1 W.
Rainer Nowak, Simeon Metev, Gerd Sepold
openaire +1 more source
Microfabrication by ion-beam etching
Journal of Vacuum Science and Technology, 1979The trend in the microelectronics industry, and in particular that part of the industry concerned with the fabrication of integrated circuits, is toward circuits with increasingly high density and devices with smaller feature size. This trend has spurred interest in several new process technologies for pattern replication.
openaire +1 more source
Microfabrication of diamond films: selective deposition and etching
Surface and Coatings Technology, 1991Abstract For the future application of diamond films to microelectronic devices and sensors, it is necessary to develop methods for making patterns a few micrometers wide of diamond films on substrates. To this end, two different methods of selected-area deposition were developed: reactive-ion etching and amorphous silicon masking of silicon ...
S. Miyauchi +7 more
openaire +1 more source
Lithography and Reactive Ion Etching in Microfabrication
1995The term “microfabrication” has been used to denote the technology for manufacturing integrated micro-circuits and microsystems. During the last 30 years the advanced micro-electronics could not maintain its place without microfabrication technology and this is also the case for the present and for the future.
I. W. Rangelow, P. Hudek
openaire +1 more source
Microfabrication of plasma nanotorch tips for localized etching and deposition
2010 IEEE Sensors, 2010We present the microfabrication and initial testing of an AFM-tip like device, or nanotorch, that is capable of generating a very localized microplasma at its tip. The submicron region near its tip provides a unique manufacturing environment where new methods for controlled direct-write micro and nanofabrication can be tested.
null Yan Xie +3 more
openaire +1 more source
Microfabrication and evaluation of diffractive optical filters prepared by reactive sputter etching
Vacuum, 1980 openalex +2 more sources
Gas-assisted focused ion beam etching for microfabrication and inspection
Microelectronic Engineering, 1990Abstract A focused ion beam system has been applied to the etching of semiconductor materials. The etching can be carried out by sputtering with the ion beam alone or by a combination of the ion beam and a reactive gas, in this case chlorine. The flexibility of the system allows beam currents from 5.10 -7 to 5.10 -12 A to be used, with a typical ...
R.J. Young, J.R.A. Cleaver, H. Ahmed
openaire +1 more source