Results 51 to 60 of about 14,698 (267)

EU research budget boost [PDF]

open access: yesCurrent Biology, 2006
New money looms for European science. Nigel Williams reports.
openaire   +1 more source

Uniform Amorphization of Crystalline Silicon Surfaces Enabled by Deep Ultraviolet Femtosecond Laser Pulses

open access: yesAdvanced Engineering Materials, EarlyView.
Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali   +5 more
wiley   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon   +9 more
wiley   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

open access: yesAdvanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao   +4 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

open access: yesAdvanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park   +12 more
wiley   +1 more source

Фискальные взаимоотношения в ЕС: теоретические аспекты, современное состояние и перспективы

open access: yesЭкономика и банки, 2016
Были выявлены методологическая основа сущности межбюджетных отношений в ЕС, а также научные и теоретические аспекты межбюджетных отношений на национальном уровне.
А.В. Кулай (A.V. Kulai)
doaj  

Reflection on the Financial Issues in the Enlarging European Union [PDF]

open access: yesRomanian Journal of European Affairs, 2004
Although access to EU financial resources is by far not the only objective of the new member countries, it is considered to be an important instrument to accelerate growth and economic modernization and support the catching up process to current EU ...
András Inotai
doaj  

Broadband Silicon‐On‐Glass Reflective Dielectric Metasurface for THz Beam Steering in 6G Wireless Networks

open access: yesAdvanced Functional Materials, EarlyView.
A CMOS‐compatible, all‐dielectric Silicon‐on‐Glass reflective metasurface enables low–loss terahertz wavefront control for future 6G wireless communication. Mie‐resonant silicon pillars provide full phase coverage near 500 GHz, achieving experimentally validated single‐, dual‐, and five‐beam steering with sub‐1.5° angular error and less than 3 dB ...
Rithwik Premanand   +6 more
wiley   +1 more source

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