Results 131 to 140 of about 21,321 (263)
Process diagnosis and control for removal processes with excimer laser radiation
S.411-416 : Abb.,Lit.Many basic aspects of surface treatment with Excimer laser radiation have been investigated and it has been shown that the processing results are affected by variations of the processing variables as well as by irregularities of the ...
Wissenbach, K. +3 more
core
Dopant Activation in Ta‐Doped SnO2 via Postdeposition Annealing for Transparent Electrodes
This study explores the thermal activation of tantalum dopants in room‐temperature deposited tin oxide films. By optimizing deposition pressure, dopant concentration, and annealing temperature, the dominant conduction mechanism shifts from oxygen vacancies to activated dopants. The resulting transparent electrodes achieve high optical transmittance and
Muhammet Mustafa Çodur +4 more
wiley +1 more source
This table of contents illustrates that the mechanism for mitigating Sr segregation depends strongly on the chemistry of the coating layer. HfO2 electrostatically stabilizes the surface by lowering the surface oxygen vacancies, which serve as the driving force for Sr migration. On the other hand, Al2O3 and Fe2O3 react with segregated Sr to form Sr‐Al‐O
Jongsu Seo +8 more
wiley +1 more source
Small SiGe quantum dots obtained by excimer laser annealing
In this paper, we obtain SiGe quantum dots with the diameters and density of 15-20 nm and 1.8 x 10(11) cm(-2), respectively, by 193 nm excimer laser annealing of Si0.77Ge0.23 strained films. Under the excimer laser annealing, only surface atoms diffusion
Liu Y +6 more
core
Spin‐Orbit Torque Induced by Switchable Crystal Inversion Symmetry Breaking
An exotic crystal inversion symmetry breaking in SrRuO3/BiFeO3 heterostructure is revealed, and it can be reversibly manipulated by the ferroelectric polarization of BiFeO3. This crystal inversion symmetry breaking can dramatically enhance the spin‐orbit torque efficiency in the SrRuO3 layer by more than 60%, providing an alternative to design an ...
Zhenyi Zheng +17 more
wiley +1 more source
Evolution of Ge and SiGe quantum dots under excimer laser annealing
We present different relaxation mechanisms of Ge and SiGe quantum dots under excimer laser annealing. Investigation of the coarsening and relaxation of the dots shows that the strain in Ge dots on Ge films is relaxed by dislocation since there is no ...
Cheng BW +5 more
core
Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley +1 more source
Se realizó un estudio retrospectivo en pacientes con distrofia corneal reticular en los que la recurrencia de la afección ocurrió después de diez años o más de realizada la queratoplastia perforante y en pacientes que presentaban la afección sin ...
Miguel O Mokey Castellanos +1 more
doaj
Tantalum Pentoxide (Ta2O5) films exhibit high refractive index (2.1 @ 1550 nm), transparency between 300 nm and 2000 nm wavelengths, compatibility with silicon processing techniques and high photosensitivity [1], making them ideal for realising compact ...
Wilkinson, James S. +3 more
core
Molecular crystals must withstand both isotropic and anisotropic stress to function in flexible optoelectronics and high‐pressure devices. In situ high‐pressure single‐crystal X‐ray diffraction coupled with DFT‐D computations reveal how an emissive molecular crystal with interdigitated packing bends elastically at ambient‐pressure and remains ...
Arif H. Dar +10 more
wiley +1 more source

