Results 81 to 90 of about 3,091 (257)
Exponential attractors for a Cahn-Hilliard model in bounded domains with permeable walls
In a previous article [7], we proposed a model of phase separation in a binary mixture confined to a bounded region which may be contained within porous walls. The boundary conditions were derived from a mass conservation law and variational methods.
Ciprian G. Gal
doaj
Smooth dynamics of a sup-cubic wave equation with delays
We establish the existence of a time-dependent exponential smooth attractor for a weakly damped wave equations with sup-cubic nonlinearity and hereditary effects in a 3D bounded domain.
Hongfang Li +4 more
doaj +1 more source
Advances in Sustainable and Wearable Textile Based Soft Robotics
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
Exponential attractors for lattice dynamical systems in weightedspaces
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
openaire +1 more source
The global attractors and exponential attractors for a class of nonlinear damping Kirchhoff equation
This paper consider the long time behavior of a class of nonlinear damped Kirchhoff equation    2 tt 1 t t u u u u u f x ï² ï€«ï¡ ï€ï§ï„ ï€ ï¡ ï€«ï¢ ïƒ‘ ï„ ï€½ . Study the attractor problem with initial boundary value conditions, then using priori estimate and the Galerkin method prove existence and uniqueness of solution, we ...
Huixian Zhu, Chengfei Ai, Guoguang Lin
openaire +2 more sources
Sodium alginate regulates interfacial ion transport and retention in electrolyte‐gated synaptic transistors. The carboxylate‐rich polymeric network forms a dynamic interfacial ion‐diffusion barrier that facilitates ion injection during programming while suppressing ion back‐diffusion, thereby stabilizing the electrochemically doped channel state.
Chaeyeon Han +6 more
wiley +1 more source
Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig +3 more
wiley +1 more source
Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko +7 more
wiley +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe
By systematically introducing defects into FeGe via ion‐beam modification, we demonstrate that disorder broadens the temperature regime over which the topological Hall effect ‐ a signature of skyrmions or other chiral textures — appears, while also increasing its magnitude.
Chaman Gupta +11 more
wiley +1 more source

