Results 71 to 80 of about 833,885 (295)

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

Three-bottle exponential decay infusion: A novel intravenous infusion strategy for drugs which conform to three-compartment model with observations on propofol kinetics

open access: yesBangladesh Journal of Pharmacology, 2012
The aim of this study is to develop a novel three-bottle exponential decay infusion method to achieve the steady state concentration rapidly for drugs which conform to three-compartment model.
Xiao-Hui Huang   +4 more
doaj   +1 more source

Polynomial decay rate for a new class of viscoelastic Kirchhoff equation related with Balakrishnan-Taylor dissipation and logarithmic source terms

open access: yesAlexandria Engineering Journal, 2020
In this paper, a polynomial decay rate of Kirchhoff’s nonlinear viscoelastic viscoelastic equation solution related with Balakrishnan-Taylor dissipation solution and logarithmic source terms is obtained, where we obtain the result of energy decay of ...
Salah Boulaaras
doaj   +1 more source

exponential decay

open access: yes, 2014
Citation: 'exponential decay' in the IUPAC Compendium of Chemical Terminology, 3rd ed.; International Union of Pure and Applied Chemistry; 2006. Online version 3.0.1, 2019. 10.1351/goldbook.E02275 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms.
openaire   +1 more source

Non-accretive Schrödinger operators and exponential decay of their eigenfunctions [PDF]

open access: yes, 2017
International audienceWe consider non-self-adjoint electromagnetic Schrödinger operators on arbitrary open sets with complex scalar potentials whose real part is not necessarily bounded from below.
Krejcirik, David   +10 more
core   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Boundary Stabilization of Memory Type for the Porous-Thermo-Elasticity System

open access: yesAbstract and Applied Analysis, 2009
We consider the one-dimensional viscoelastic Porous-Thermo-Elastic system. We establish a general decay results. The usual exponential and polynomial decay rates are only special cases.
Abdelaziz Soufyane   +2 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Schottky anomaly observed in 31P NMR for 31P-doped Si

open access: yesJournal of Analytical Science and Technology, 2010
The Schottky anomaly, which happens when the heat capacity of nuclei is comparable to that of electrons, was observed in NMR for phosphorous doped silicon. The anomaly appears as an abnormal double exponential decay in the nuclear spin relaxation at very
Soonchil Lee   +2 more
doaj  

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

Home - About - Disclaimer - Privacy