Results 201 to 210 of about 12,477,982 (369)

Supercompliant Lattice Boosts n‐type AgSbTe2 Thermoelectrics

open access: yesAdvanced Functional Materials, EarlyView.
The supercompliant lattice design enables the first realization of n‐type electrical transport in AgSbTe2 by overcoming intrinsic electron‐killer defects and exceeding the doping limits imposed by the conventional Hume–Rothery rule. Accordingly, the best performance n‐type Ag0.8Na0.3Sb0.6Bi0.4Te2 sample achieves a low κ of 0.27 W·m−1·K−1 that ...
Ruoyan Li   +15 more
wiley   +1 more source

“Writing” Crystal Phases in Amorphous Calcium Carbonate via Laser‐Induced Patterned Transformations

open access: yesAdvanced Functional Materials, EarlyView.
Laser‐induced crystallization enabling the patterning of amorphous calcium carbonate into various distinct phases is introduced. This approach provides spatial control over polymorph selection, both crystalline and amorphous, inspired by biomineralization pathways.
Hadar Shaked   +6 more
wiley   +1 more source

Omnidirectional Transmissive Acoustic Metasurfaces Based on Goldberg Polyhedra

open access: yesAdvanced Functional Materials, EarlyView.
This study introduces omnidirectional acoustic metasurfaces capable of manipulating wavefronts in multiple arbitrary directions simultaneously. A full‐stack pipeline for design, optimization, and fabrication is presented to construct near‐spherical holograms based on Goldberg polyhedra.
Andrea Achilleos   +3 more
wiley   +1 more source

On entire functions of exponential type [PDF]

open access: yesJournal of Research of the National Bureau of Standards, Section B: Mathematical Sciences, 1971
W.C. Sisarcick, S.M. Shah
openaire   +1 more source

Deterministic Writing of Field‐Free and Unipolar Spin‐Transfer Torque Magnetic Random‐Access Memory

open access: yesAdvanced Functional Materials, EarlyView.
Deterministic unipolar‐switching STT‐MRAM with field‐free operation is experimentally demonstrated. The device features a compact 4F2 cell architecture using a diode as the access device and a single magnetic tunneling junction. Unlike conventional bipolar switching STT‐MRAM requiring a three‐terminal access transistor in the array, this design offers ...
Ming‐Chun Hong   +22 more
wiley   +1 more source

Home - About - Disclaimer - Privacy