Results 191 to 200 of about 2,223 (301)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Models of Holomorphic Functions on the Symmetrized Skew Bidisc. [PDF]

open access: yesIntegr Equ Oper Theory
Evans C, Lykova ZA, Young NJ.
europepmc   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo   +10 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

open access: yesAdvanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu   +17 more
wiley   +1 more source

Spin-Bounded Correlations: Rotation Boxes Within and Beyond Quantum Theory. [PDF]

open access: yesCommun Math Phys
Aloy A   +4 more
europepmc   +1 more source

Texoskeletons: Developing the Fundamental Technologies for Creating Intelligent Soft Robotic Clothing With Integrated 1D Sensors and Actuators

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Traditional wearable exoskeletons rely on rigid structures, which limit comfort, flexibility, and everyday usability. This work introduces the fundamental technologies to create the first soft, lightweight, intelligent textile‐based exoskeletons (Texoskeletons) built using 1D sensors and actuators.
Amy Lukomiak   +19 more
wiley   +1 more source

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