Results 181 to 190 of about 590,097 (261)

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Multiscale heterogeneity of atypical functional connectivity in autism. [PDF]

open access: yesNat Ment Health
Ilioska I   +18 more
europepmc   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Transparent Deformable Thin Film Electric Heater for Stable and Accurate Control of High Temperatures

open access: yesAdvanced Functional Materials, EarlyView.
Au/GaOx‐based transparent heaters combine high optical transmittance and low sheet resistance with exceptional thermal stability up to 521°C for over 6 h. The interfacial GaOx layer suppresses dewetting of Au and enhances adhesion, ensuring mechanical robustness during deformation and reliability for real‐world applications including grilling ...
Younghyun Lee   +8 more
wiley   +1 more source

Flood frequency analysis of Panchganga river basin using Gumbel and Log-Pearson Type III models. [PDF]

open access: yesSci Rep
Das S   +5 more
europepmc   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

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