Results 191 to 200 of about 377,418 (307)

Additive Manufacture of Diamond:Titanium Hybrid Quantum Sensors

open access: yesAdvanced Materials Interfaces, EarlyView.
ABSTRACT Additive manufacture represents one of the most advanced techniques for the creation of complex parts for applications as diverse as aerospace and implant surgery. However, a challenge with bespoke manufacture of metal parts is the incorporation of sensor elements in a fashion compatible with the 3D printing process.
Daniel Stavrevski   +12 more
wiley   +1 more source

A Comparative Study on Early‐Stage Icing Evaluation Techniques for Passive Ice Protection Systems

open access: yesAdvanced Materials Interfaces, EarlyView.
This study addresses the lack of standardized methodologies for evaluating the early‐stage icing performance of passive ice protection systems. A unified experimental protocol is proposed and applied to representative hydrophilic and hydrophobic surfaces under controlled conditions.
Lorenzo Facco   +4 more
wiley   +1 more source

<i>In situ</i> self-assembling rebamipide-based eye drops to promote secretion of mucin for treatment of dry eye. [PDF]

open access: yesMater Today Bio
Lv G   +11 more
europepmc   +1 more source

Direct Mode‐Resolved Measurement of Interfacial Phonon Transport by Acoustic Phonon Reflectometry

open access: yesAdvanced Materials Interfaces, EarlyView.
We introduce a novel analysis, acoustic phonon reflectometry, that measures the mode‐resolved phonon reflection coefficient at semiconductor interfaces. In aluminum nitride, we observe excellent agreement with the acoustic mismatch model across three distinct interfaces.
Christopher Hennighausen   +9 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Topological Point Defects in SmC* Liquid Crystals Under Mechanical Disturbance

open access: yesAdvanced Materials Interfaces, EarlyView.
Tangetial air jet shear inducess island formation and nucleates topological point defects in uniform SmC films. Island bounded by edge dislocation loops shrink and transform into isolated point defects under continued shear. Mechanical perturbatio provides a controllable route for defect engineering in smectric liquid crystal thin films.
Gunganist Kongklad   +3 more
wiley   +1 more source

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