Results 261 to 270 of about 4,580,673 (328)

Cryo‐EM of Rationally Designed Photosystem I Nanoassembly on Graphene Validates Orientation‐Driven Enhancement of Photocatalytic Performance

open access: yesAdvanced Functional Materials, EarlyView.
The first cryo‐EM visualization and quantification of oriented Photosystem I (PSI) on single‐layer graphene is reported. Domain‐specific covalent anchoring of PSI, with the reducing side of the biophotocatalyst toward graphene, promotes three‐fold higher anodic photocurrent generation compared to a randomly physisorbed counterpart. This approach allows
Miriam Izzo   +6 more
wiley   +1 more source

Large Anomalous and Topological Hall Effect and Nernst Effect in a Dirac Kagome Magnet Fe3Ge

open access: yesAdvanced Functional Materials, EarlyView.
Fe3Ge, a Kagome‐lattice magnet, exhibits remarkable anomalous Hall and Nernst effects, with transverse thermoelectric conductivity surpassing or comaprable to some well‐known ferromagnets. First‐principles calculations attribute these to Berry curvature from massive Dirac gaps. Additionally, topological Hall and Nernst signals emerge from field‐induced
Chunqiang Xu   +11 more
wiley   +1 more source

Continuous‐Flow Photocatalytic Degradation of Glyphosate and Aminomethylphosphonic Acid Under Simulated Sunlight with TiO2‐Coated Poly(vinylidene fluoride) Membrane

open access: yesAdvanced Functional Materials, EarlyView.
Glyphosate (GLY) and its primary metabolite, aminomethylphosphonic acid (AMPA), are photodegraded using a poly(vinylidene fluoride) membrane with immobilized titanium dioxide (PVDF‐TiO2) in a continuous flow‐through operation under solar light. At optimized conditions, the PVDF‐TiO2 membrane achieved 95% GLY and 80% AMPA removal with •O2− as the ...
Phuong B. Trinh   +4 more
wiley   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

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