Construction of N/S CQDs@Fe-TCPP Nanocatalyst-Induced Electrochemical Sensors for Rapid and Sensitive Detection of Enrofloxacin Residues in Milk. [PDF]
Wang W +10 more
europepmc +1 more source
The first cryo‐EM visualization and quantification of oriented Photosystem I (PSI) on single‐layer graphene is reported. Domain‐specific covalent anchoring of PSI, with the reducing side of the biophotocatalyst toward graphene, promotes three‐fold higher anodic photocurrent generation compared to a randomly physisorbed counterpart. This approach allows
Miriam Izzo +6 more
wiley +1 more source
Isn't it ironic? Functional iron deficiency at the core of Parkinson's disease pathobiology. [PDF]
Peikon I, Andrews NC.
europepmc +1 more source
Large Anomalous and Topological Hall Effect and Nernst Effect in a Dirac Kagome Magnet Fe3Ge
Fe3Ge, a Kagome‐lattice magnet, exhibits remarkable anomalous Hall and Nernst effects, with transverse thermoelectric conductivity surpassing or comaprable to some well‐known ferromagnets. First‐principles calculations attribute these to Berry curvature from massive Dirac gaps. Additionally, topological Hall and Nernst signals emerge from field‐induced
Chunqiang Xu +11 more
wiley +1 more source
Recycling of High-Purity Lithium Metal from Waste Battery by Photoelectrochemical Extraction at Ultralow Overall Potential. [PDF]
Yang L +5 more
europepmc +1 more source
Glyphosate (GLY) and its primary metabolite, aminomethylphosphonic acid (AMPA), are photodegraded using a poly(vinylidene fluoride) membrane with immobilized titanium dioxide (PVDF‐TiO2) in a continuous flow‐through operation under solar light. At optimized conditions, the PVDF‐TiO2 membrane achieved 95% GLY and 80% AMPA removal with •O2− as the ...
Phuong B. Trinh +4 more
wiley +1 more source
Retraction: Effects of Iron Overload on the Bone Marrow Microenvironment in Mice. [PDF]
PLOS One Editors.
europepmc +1 more source
Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang +6 more
wiley +1 more source
Electronic and magnetic properties of defective and Fe-doped InS monolayers adjusted by hole doping as a second functionalization step: a first-principles study. [PDF]
Tien NT +5 more
europepmc +1 more source

