Strong Fermi-Level Pinning in GeS-Metal Nanocontacts. [PDF]
Germanium sulfide (GeS) is a layered monochalcogenide semiconductor with a band gap of about 1.6 eV. To verify the suitability of GeS for field-effect-based device applications, a detailed understanding of the electronic transport mechanisms of GeS-metal junctions is required.
Sun Y +3 more
europepmc +4 more sources
Fermi-Level Tuning of G-Doped Layers [PDF]
Recently, geometry-induced quantum effects were observed in periodic nanostructures. Nanograting (NG) geometry significantly affects the electronic, magnetic, and optical properties of semiconductor layers.
Avto Tavkhelidze +3 more
doaj +5 more sources
Electronic stripe patterns near the fermi level of tetragonal Fe(Se,S) [PDF]
FeSe1−x S x remains one of the most enigmatic systems of Fe-based superconductors. While much is known about the orthorhombic parent compound, FeSe, the tetragonal samples, FeSe1−x S x with x > 0.17, remain relatively unexplored.
M. Walker +15 more
doaj +2 more sources
Asymptotic Pomeranchuk instability of Fermi liquids in half-filled Landau levels [PDF]
We present a theory of spontaneous Fermi surface deformations for half-filled Landau levels (filling factors of the form $$\nu =2 \, n+1/2$$ ν = 2 n + 1 / 2 ).
Jorge Quintanilla, Orion Ciftja
doaj +2 more sources
Understanding Catalyst ‘Volcano’ Dependence Through Fermi-Level Controlled Kinetics Using Electronic Theory [PDF]
The ubiquitous two-step Michaelis–Menten and Temkin–Boudart reaction mechanisms are extended to include the influence of the catalyst electronic subsystem in a 5-step mechanism.
Nigora Turaeva +2 more
doaj +2 more sources
Estimating the quasi-Fermi level of holes at the surface of semiconductor photoanodes using outer-sphere redox couples [PDF]
Semiconductor electrodes can catalyze photo-induced redox reactions with light illumination. Photoexcitation produces excited carriers that subsequently transfer to the front and back contacts as determined by the bulk and surface properties of the ...
Yuu Shioiri +9 more
doaj +2 more sources
A full gap above the Fermi level: the charge density wave of monolayer VS2 [PDF]
A charge density wave (CDW) normally creates a gap at the Fermi level, inducing a metal-insulator transition. Here, the authors report that a CDW gap resides in the unoccupied states but induces a topological metal-metal transition at the Fermi level in ...
Camiel van Efferen +17 more
doaj +2 more sources
Fabrication of p-type 2D single-crystalline transistor arrays with Fermi-level-tuned van der Waals semimetal electrodes. [PDF]
Song S +15 more
europepmc +3 more sources
Fermi-level pinning in methylammonium lead iodide perovskites
Scanning tunnelling microscopy measurements reveal grain dependent changes in surface state density and workfunctions on polycrystalline CH3NH3PbI3 absorbers.
Thibaut Gallet +3 more
openaire +7 more sources
Universal Fermi-Level Pinning in Transition-Metal Dichalcogenides. [PDF]
The journal of physical chemistry <Washington, DC> / C C, Nanomaterials and interfaces 123(9), 5411-5420 (2019).
Sotthewes K +7 more
europepmc +5 more sources

