Fermi Level Position at Metal-Semiconductor Interfaces [PDF]
, 1964 Carver Mead, W. G. Spitzer
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Advanced Functional Materials, EarlyView.MXene dervied CoFe composites show increased initial Oxygen Evolution Reaction (OER) activity compared to the pure CoFe and MXene in an Anion Exchange Membrane device. Vanadium vacancies in the MXene plays a role in increased OER activity and hinders Fe leaching in the AEM device over using the pure V2C MXene as a support material for the CoFe ...
Can Kaplan +16 more
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Effect of Fermi-Level Motion on Normal-State Properties ofβ-Tungsten Superconductors [PDF]
, 1967 Roger W. Cohen +2 more
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Achieving Chemical Recognition, Recycling, and Circularity With Radical Nanostructures
Advanced Functional Materials, EarlyView.Here, innovative 3D radical nanostructures based on 4,4′‐dicyano‐2,2′‐biphenylene‐fused tetrazolinyl radical, fabricated on interdigitated gold‐SiO2 hybrid surfaces are presented. They retain their magnetic properties, their morphology and size can can tune, selectively remove them from specific substrate regions using distilled water, and return the ...
Arkaprava Das +10 more
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EFFECTIVE QUASIPARTICLE RECOMBINATION TIMES AND ELECTRONIC DENSITY OF STATES AT THE FERMI LEVEL IN SUPERCONDUCTING FILMS [PDF]
, 1978 Peter W. Epperlein +2 more
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Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires.
Nano letters (Print), 2016 Surface effects strongly dominate the intrinsic properties of semiconductor nanowires (NWs), an observation that is commonly attributed to the presence of surface states and their modification of the electronic band structure. Although the effects of the
M. Speckbacher +10 more
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Flexible Optical Fiber Stress/Temperature Dual‐Mode Sensing Based on CaZnOS:Nd,Er
Advanced Functional Materials, EarlyView.Temperature and stress sensing based on flexible optical fibers may be the key to future artificial intelligence's perception of the world, here an optical fiber sensor capable of realizing such dual mode sensing is preliminary confirmed based on CaZnOS:Nd3+,Er3+.
Pan Zheng +12 more
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Overcoming the Fermi-Level Pinning Effect in the Nanoscale Metal and Silicon Interface. [PDF]
Nanomaterials (Basel), 2023 Su ZC, Lin CF.
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Advanced Functional Materials, EarlyView.Multifunctional atomic layer deposited coatings and interface treatments enhance direct solar water splitting on GaAs/GaInP tandem cells. Optimized TiO2/Pt nanoparticle bilayers ensure durability and catalytic efficiency with minimal optical losses, while H2 plasma pretreatments maximize photovoltage and interfacial charge extraction.
Tim F. Rieth +8 more
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Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMTs [PDF]
, 1989 Hiroshi Mizuta +4 more
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