Results 141 to 150 of about 326,700 (334)

Polaronic and Electrochemical Signatures in Group IVB (Ti, Zr, Hf) Oxides: Unified SKP–DFT Insights for Tunable Transport in Energy and Electronic Devices

Advanced Functional Materials, EarlyView.
Charge carrier concentration and mobility in TiO2, ZrO2, and HfO2 powder films are experimentally mapped as a function of temperature. The results uncover polaron‐mediated transport regimes and field‐activated conduction, enabling the design of oxide‐based electronic and energy devices with thermally tunable functionality.
Beatriz Moura Gomes, Júlia Holtz, Maria Luís Pinto, Maria Helena Braga   +3 more
wiley   +1 more source

In Vivo Voltammetric Imaging of Metal Nanoparticle-Catalyzed Single-Cell Electron Transfer by Fermi Level-Responsive Graphene. [PDF]

Research (Wash D C), 2023
Xia Q, Liu R, Chen X, Chen Z, Zhu JJ.
europepmc   +1 more source

Coverage dependence of the Fe-induced Fermi-level shift and the two-dimensional electron gas on InAs(110) [PDF]

, 2000
Markus Morgenstern, M. Getzlaff, D. Haude, R. Wiesendanger, Robert L. Johnson   +4 more
openalex   +1 more source

Gated PN Junction in Ambipolar MoS2 for Superior Self‐Powered Photodetection

Advanced Functional Materials, EarlyView.
A high‐quality gated pn junction based on ambipolar molybdenum disulfide (MoS2) is demonstrated by employing a partial‐gate structure and a Pt bottom contact that forms a semi‐van der Waals interface, facilitating efficient hole injection into the channel.
Jaeha Hwang, Jungi Song, Hanbyeol Jang, Yongwook Seok, Jiwi Park, Suyeon Lee, Jun‐Hyeok Choi, Gyeongsu Lee, Kenji Watanabe, Takashi Taniguchi, Byoung Hun Lee, Kyoungsik Yu, Kayoung Lee   +12 more
wiley   +1 more source

Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb₂Te₃/Bi₂Te₃ Topological Insulator Heterostructure for Spin-Charge Conversion. [PDF]

ACS Appl Mater Interfaces, 2023
Longo E, Locatelli L, Tsipas P, Lintzeris A, Dimoulas A, Fanciulli M, Longo M, Mantovan R.   +7 more
europepmc   +1 more source

Orbital character ofO−2punoccupied states near the Fermi level inCrO2 [PDF]

, 2000
Cristian Stagarescu, Xinxin Su, D. E. East̀man, K. N. Altmann, F. J. Himpsel, A. Gupta   +5 more
openalex   +1 more source

Remodeling Interfacial Electrical Field for Superhigh Capacity and Ultralong Lifespan Aqueous Zinc‐Ion Batteries

Advanced Functional Materials, EarlyView.
The design of cathode materials is the key to solving the practical application of AZIBs. In this work, the formation of the built‐in electric field in the NVO@CC material adjusts the electronic structure, showing high specific capacity and ultra‐long cycle stability, and achieving rapid diffusion of ions and good electrochemical kinetics.
Yan Ran, Mengyao Li, Huaping Zhao, Jie Ren, Yonglong Sheng, Guosheng Shao, Yude Wang, Yong Lei   +7 more
wiley   +1 more source

Revealing Fermi surface evolution and Berry curvature in an ideal type-II Weyl semimetal

Nature Communications
In type-II Weyl semimetals (WSMs), the tilting of the Weyl cones leads to the coexistence of electron and hole pockets that touch at the Weyl nodes.
Qianni Jiang, Johanna C. Palmstrom, John Singleton, Shalinee Chikara, David Graf, Chong Wang, Yue Shi, Paul Malinowski, Aaron Wang, Zhong Lin, Lingnan Shen, Xiaodong Xu, Di Xiao, Jiun-Haw Chu   +13 more
doaj   +1 more source

Ruthenium-Alloyed Iron Phosphide Single Crystal with Increased Fermi Level for Efficient Hydrogen Evolution. [PDF]

ACS Appl Mater Interfaces, 2022
Kang Y, Han Y, Chen H, Borrmann H, Adler P, Pohl D, Hantusch M, König M, He Y, Ma Y, Wang X, Felser C.   +11 more
europepmc   +1 more source

Fermi Level Pinning at GaN-interfaces: Correlation of electrical admittance and transient spectroscopy [PDF]

, 2000
H. De Witte, A. Krtschil, Marco Lisker, D. Rudloff, J. Christen, A. Krost, M. Stutzmann, F. Scholz   +7 more
openalex   +1 more source