Results 171 to 180 of about 326,700 (334)

Electrostatic Field and Partial Fermi Level Pinning at the Pentacene−SiO2Interface [PDF]

open access: green, 2005
Liwei Chen   +5 more
openalex   +1 more source

Single‐Step Synthesis of In‐plane 1T'‐2H Heterophase MoTe2 for Low‐Resistance Contacts

open access: yesAdvanced Functional Materials, EarlyView.
A single‐step CVD method is developed to synthesize seamless in‐plane 1T'‐2H MoTe2 heterophase junctions with precise phase control and uniform large‐area coverage. The resulting transistors, incorporating 1T' MoTe2 contacts and 2H MoTe2 channels, exhibit ultralow contact resistance, offering a scalable solution to the long‐standing challenge of ...
Ye Lin   +9 more
wiley   +1 more source

Constant inner potential DFT for modelling electrochemical systems under constant potential and bias

open access: yesnpj Computational Materials
Electrochemical systems play a decisive role in, e.g. clean energy conversion but understanding their complex chemistry remains an outstanding challenge.
Marko M. Melander   +3 more
doaj   +1 more source

Unveiling Phonon Contributions to Thermal Conductivity and the Applicability of the Wiedemann—Franz Law in Ruthenium and Tungsten Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Thermal transport in Ru and W thin films is studied using steady‐state thermoreflectance, ultrafast pump–probe spectroscopy, infrared‐visible spectroscopy, and computations. Significant Lorenz number deviations reveal strong phonon contributions, reaching 45% in Ru and 62% in W.
Md. Rafiqul Islam   +14 more
wiley   +1 more source

All‐Optical Electric Field Sensing with Nanodiamond‐Doped Polymer Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
The photoluminescence (PL) of fluorescent nanodiamonds (FNDs) in a polymer‐based capacitor device is sensitive to electric fields. When an external electric field is applied, the PL intensity of the negatively charged nitrogen‐vacancy center (NV‐) increases, while that of the neutrally charged NV center (NV0) decreases.
Roy Styles   +11 more
wiley   +1 more source

Band Alignment in In‐Oxo Metal Porphyrin SURMOF Heterojunctions

open access: yesAdvanced Functional Materials, EarlyView.
Porphyrin core metalation in indium‑oxo SURMOFs enables systematic tuning of band edge positions without altering the crystal structure. First‑principles calculations reveal type‑I and type‑II heterostructures as well as multi‑junction energy cascades, establishing a modular strategy for exciton funneling and charge separation in optoelectronic ...
Puja Singhvi, Nina Vankova, Thomas Heine
wiley   +1 more source

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