Results 191 to 200 of about 326,700 (334)

Strategic Fermi Level Engineering of Donor-Acceptor Self-Assembled Monolayer toward Ultrahigh Paired-Pulse Facilitations in Photosynaptic Transistors. [PDF]

J Am Chem Soc
Wu YS, Chen WC, Lin YS, Liu CL, Lin YC, Chen WC.   +5 more
europepmc   +1 more source

Dispersion of the strongly correlated electron system near the Fermi level

, 2001
A. Sherman
openalex   +2 more sources

Direct Evidence of Topological Dirac Fermions in a Low Carrier Density Correlated 5d Oxide

Advanced Functional Materials, EarlyView.
The 5d oxide BiRe2O6 is discovered as a low‐carrier‐density topological semimetal hosting symmetry‐protected Dirac fermions stabilized by nonsymmorphic symmetries. Angle‐resolved photoemission spectroscopy, quantum oscillations, and magnetotransport measurements reveal gapless Dirac cones, quasi‐2D Fermi surfaces, high carrier mobility, and a field ...
Premakumar Yanda, Jorge Cardenas‐Gamboa, Ding Pei, François Bertran, Leila Noohinejad, Snehashish Chatterjee, Changjiang Yi, Iñigo Robredo, Horst Borrmann, Maia G. Vergniory, Chandra Shekhar, Claudia Felser   +11 more
wiley   +1 more source

Spin polarized nodal loop state at Fermi level in the monolayer PrClS. [PDF]

Front Chem
Zhao Y, Zhang L, Gao Y.
europepmc   +1 more source

Influence of the statistical shift of Fermi level on the conductivity behavior in microcrystalline silicon [PDF]

, 2008
Sanjay K. Ram, Satyendra Kumar, Pere Roca i Cabarrocas   +2 more
openalex   +1 more source

Heterostructure‐Driven D‐Band of MoS2 Engineering Catalytic Polysulfide Conversion in Lithium–Sulfur Batteries

Advanced Functional Materials, EarlyView.
Research on phase ratio‐dependent modulation of built‐in electric fields and d‐band centers in yolk–shell structured C@MoS2‐MoSe2 has determined that the C@3MoS2‐1MoSe2 configuration is optimal, which can achieve an optimal d‐band center position and enhance electrochemical performance.
Ruixian Duan, Guiqiang Cao, Jun Li, Qinting Jiang, Chenyang Hou, Huijuan Yang, Jingjing Wang, Wenbin Li, Changhong Wang, Kun Zhang, Xueliang Sun, Xifei Li   +11 more
wiley   +1 more source

Fermi Level Shifts of Organic Semiconductor Films in Ambient Air. [PDF]

ACS Appl Mater Interfaces
Li X, Zhang Q, Chen Y, Liu X, Braun S, Fahlman M.   +5 more
europepmc   +1 more source

Fermi Level Movements at the Transition Metal/GaN Interface

, 2002
Jae M. Seo, J.H. Kim, Hye Jeong Kang
openalex   +2 more sources

Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS2–MoS2 Lateral Heterostructures

Advanced Functional Materials, EarlyView.
Surface potential distribution image, along with the derived electric field distribution across the interface, reveals that the electric field reaches its peak at the interface. Additionally, the spectral response of the heterointerface exhibits higher and broader features compared to its bare counterparts.
Pargam Vashishtha, Clara Kofler, Ajay Kumar Verma, Sindhu Priya Giridhar, Jonathan O. Tollerud, Nethmi S. L. Dissanayake, Tanish Gupta, Manoj Sehrawat, Vishnu Aggarwal, Edwin L.H. Mayes, Billy J. Murdoch, Deepak Sharma, Taimur Ahmed, Jani Kotakoski, Jeffrey A. Davis, Yuerui Lu, Govind Gupta, Irfan H. Abidi, Sumeet Walia   +18 more
wiley   +1 more source

Inhomogeneous Ni/Ge Schottky barriers due to variation in Fermi-level pinning [PDF]

, 2009
X.V. Li, Muhammad K. Husain, Michail E. Kiziroglou, C.H. de Groot   +3 more
openalex   +1 more source