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Fermi-level pinning at heterojunctions
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1983We have extended our calculations for defect levels at semiconductor free surfaces to ideal semiconductor heterojunctions. We find that the Fermi-energy pinning observed for deposition of Ge and Si (as well as metals and oxygen) on GaAs(110) surfaces is explained very satisfactorily by free-surface antisite defect levels, but cannot be explained, even ...
Roland E. Allen +2 more
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American Journal of Physics, 1961
A simple apparatus demonstrates the dependence of Fermi level upon the temperature and impurity content of a semiconductor. Electrons are represented by ball bearings and states are represented by holes in a plastic sheet. A Fermi probability function template is positioned in energy to accommodate precisely the number of “electrons” originally put ...
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A simple apparatus demonstrates the dependence of Fermi level upon the temperature and impurity content of a semiconductor. Electrons are represented by ball bearings and states are represented by holes in a plastic sheet. A Fermi probability function template is positioned in energy to accommodate precisely the number of “electrons” originally put ...
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Adsorption-induced Fermi level pinning
Physics of the Solid State, 2008The adsorption-induced Fermi level pinning is shown to occur at the coverages Θ* corresponding to a shallow extremum or saturation of the work function of the system. Equations for Θ* are derived within a modified Anderson-Newns adsorption model. Experimental data on the adsorption of atoms of alkali, alkaline-earth (Ba), and rare-earth metals and ...
S. Yu. Davydov, S. V. Troshin
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Reversibility of Fermi level pinning
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988By depositing monolayer coverage of Ag on freshly cleaved, clean GaAs(110) surface, the surface Fermi level was found to pin at 0.45±0.05 eV above valence band maximum (VBM) for p-GaAs and 0.65±0.05 eV above VBM for n-GaAs, due to the formation of midgap electronic states.
T. T. Chiang +4 more
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Fermi level, work function and vacuum level
Materials Horizons, 2016Electronic levels and energies of a solid, such as Fermi level, vacuum level, work function, ionization energy or electron affinity, are of paramount importance for the control of device behavior, charge carrier injection and transport.
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Magnetic Circular Dichroism near the Fermi Level
Physical Review Letters, 2006We report the observation of enhanced magnetic circular dichroism (MCD) near the Fermi level using visible and ultraviolet lasers. More than 10% MCD asymmetry is achieved for a perpendicularly magnetized 12 ML (monolayer) Ni film on Cu(001). By changing the work function with the aid of cesium adsorption, the MCD asymmetry of is found to be enhanced ...
Takeshi, Nakagawa, Toshihiko, Yokoyama
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Redox Levels through Constant Fermi-Level ab Initio Molecular Dynamics
Journal of Chemical Theory and Computation, 2017We develop a method to determine redox levels of half reactions through the use of ab initio molecular dynamics evolving at constant Fermi energy. This scheme models the effect of an electrode by controlling the charge transfer between the single-particle energy levels of the system and an electron reservoir set at a given potential during the dynamics.
Assil Bouzid, Alfredo Pasquarello
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A Note on Fermi Levels, Quasi-Fermi Levels, and Terminal Voltages in Semiconductor Devices
American Journal of Physics, 1963The concepts of electrostatic and electrochemical potentials as they bear on the volt-ampere characteristics of semiconductor devices are reviewed. The meaning of voltage drops across portions of semiconductor materials containing excess carriers is clarified.
A. G. Jordan +2 more
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Journal of Physics: Condensed Matter, 2002
Diamond is a wide-band-gap material with large donor and acceptor ionization energies. In principle, at room temperature and below, the Fermi energy is pinned close to the donor or acceptor level, depending on which is present in the higher concentration.
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Diamond is a wide-band-gap material with large donor and acceptor ionization energies. In principle, at room temperature and below, the Fermi energy is pinned close to the donor or acceptor level, depending on which is present in the higher concentration.
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Fermi-Level Pinning in Nanocrystal Memories
IEEE Electron Device Letters, 2007The nanocrystal (NC) work-function engineering, which plays an important role on the NC memory characteristics such as memory window and retention time, were long regarded as a matter of choice on NC materials. In this letter, we report opposite polarities of charge storage in Au NC memories with different control oxides. The effective NC work function
Tuo-Hung Hou +2 more
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