Results 281 to 290 of about 326,700 (334)
Some of the next articles are maybe not open access.
Fermi-level pinning at heterojunctions
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1983We have extended our calculations for defect levels at semiconductor free surfaces to ideal semiconductor heterojunctions. We find that the Fermi-energy pinning observed for deposition of Ge and Si (as well as metals and oxygen) on GaAs(110) surfaces is explained very satisfactorily by free-surface antisite defect levels, but cannot be explained, even ...
John D. Dow +2 more
openaire +2 more sources
Reversibility of Fermi level pinning
Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1988By depositing monolayer coverage of Ag on freshly cleaved, clean GaAs(110) surface, the surface Fermi level was found to pin at 0.45±0.05 eV above valence band maximum (VBM) for p-GaAs and 0.65±0.05 eV above VBM for n-GaAs, due to the formation of midgap electronic states.
I. Lindau +4 more
openaire +2 more sources
A Note on Fermi Levels, Quasi-Fermi Levels, and Terminal Voltages in Semiconductor Devices
American Journal of Physics, 1963The concepts of electrostatic and electrochemical potentials as they bear on the volt-ampere characteristics of semiconductor devices are reviewed. The meaning of voltage drops across portions of semiconductor materials containing excess carriers is clarified.
D.L. Scharfetter +2 more
openaire +2 more sources
Unpinning of Fermi level in nanocrystalline semiconductors
Applied Physics Letters, 2004A theoretical model has been developed to interpret the size dependent behavior of nanostructured metal-oxide semiconductors. It is based on the determination of the surface-state density, which pins the Fermi level of the semiconductor, thus removing the linear relationship between the work function and the Schottky barrier.
MALAGU', Cesare +3 more
openaire +3 more sources
Journal of Physics: Condensed Matter, 2002
Diamond is a wide-band-gap material with large donor and acceptor ionization energies. In principle, at room temperature and below, the Fermi energy is pinned close to the donor or acceptor level, depending on which is present in the higher concentration.
openaire +3 more sources
Diamond is a wide-band-gap material with large donor and acceptor ionization energies. In principle, at room temperature and below, the Fermi energy is pinned close to the donor or acceptor level, depending on which is present in the higher concentration.
openaire +3 more sources
Optical transition to the Fermi level in NaxWO3
Physics Letters A, 1972Abstract Evidence is given of an optical transition to the Fermi level in metallic Na x WO 3 . The transition energy depends on the stoichiometric index x . The data allow to evaluate an average m ∗ .
A. Stella, A. Gustinetti, G. Giuliani
openaire +2 more sources
The Fermi level and the redox potential
The Journal of Physical Chemistry, 1985Discussion didactique sur le niveau de Fermi en tant que potentiel electrochimique de l'electron dans des solides et dans des solutions liquides non metalliques.
openaire +2 more sources
American Journal of Physics, 1961
A simple apparatus demonstrates the dependence of Fermi level upon the temperature and impurity content of a semiconductor. Electrons are represented by ball bearings and states are represented by holes in a plastic sheet. A Fermi probability function template is positioned in energy to accommodate precisely the number of “electrons” originally put ...
openaire +2 more sources
A simple apparatus demonstrates the dependence of Fermi level upon the temperature and impurity content of a semiconductor. Electrons are represented by ball bearings and states are represented by holes in a plastic sheet. A Fermi probability function template is positioned in energy to accommodate precisely the number of “electrons” originally put ...
openaire +2 more sources
Fermi level and current transport of Bi12GeO2
Journal of Applied Physics, 1987A photoelectrochemical resistor was constructed using a bismuth germanium oxide electrode and a liquid junction. Current transport consists of the oxidation and reduction of water by holes and electrons, and the device exhibits ideal current voltage characteristics with a ratio of light to dark current greater than 104.
Christian M. Braun, Akira Fujishima
openaire +2 more sources
Quantum oscillations of the fermi level in metals
Physics Letters A, 1970Abstract It is shown that an effect reported by Caplin and Shoenberg and ascribed to oscillations of the Fermi level in lead, probably had its origin in oscillations of the Hall potential associated with eddy currents induced by the time varying magnetic field.
D. Shoenberg, M. Peter, D.L. Randles
openaire +2 more sources