Results 21 to 30 of about 15,030,259 (251)

Ferroelectrically modulate the Fermi level of graphene oxide to enhance SERS response

open access: yesOpto-Electronic Advances, 2023
Surface-enhanced Raman scattering (SERS) substrates based on chemical mechanism (CM) have received widespread attentions for the stable and repeatable signal output due to their excellent chemical stability, uniform molecular adsorption and controllable ...
Mingrui Shao   +9 more
semanticscholar   +1 more source

Minimizing heat generation in quantum dot light-emitting diodes by increasing quasi-Fermi-level splitting

open access: yesNature Nanotechnology, 2023
Minimizing heat accumulation is essential to prolonging the operational lifetime of quantum dot light-emitting diodes (QD-LEDs). Reducing heat generation at the source is the ideal solution, which requires high brightness and quantum efficiency at low ...
Yanyuan Gao   +13 more
semanticscholar   +1 more source

Subsurface Engineering Induced Fermi Level De-pinning in Metal Oxide Semiconductors for Photoelectrochemical Water Splitting.

open access: yesAngewandte Chemie, 2022
Photoelectrochemical (PEC) water splitting is a promising approach for renewable solar light conversion. However, surface Fermi level pinning (FLP), caused by surface trap states, severely restricts the PEC activities.
Jun Wang   +14 more
semanticscholar   +1 more source

Synthesis and electrical transport properties of Er1-xScxNiSb semiconducting solid solution

open access: yesФізика і хімія твердого тіла, 2021
Samples of Er1-xScxNiSb (x = 0–0.10) solid solution were synthesized by an arc-melting and the effect of doping by Sc atoms on the electrokinetic and energetic characteristics of the half-Heusler ErNiSb phase was investigated.
L. Romaka   +6 more
doaj   +1 more source

Peculiarities of structural, electrokinetic, energetic, and magnetic properties semiconductive solid solution Lu1-xVxNiSb

open access: yesФізика і хімія твердого тіла, 2023
The structural, electrokinetic, energetic, and magnetic properties of the new semiconductive solid solution Lu1-xVxNiSb, х=0–0.10, were studied. It was shown that V atoms could simultaneously occupy different crystallographic positions in different ...
Yu. Stadnyk   +7 more
doaj   +1 more source

Gas sensitivity of individual nanostructures based on functionalized multi-walled carbon nanotubes and metal oxides [PDF]

open access: yesОмский научный вестник, 2018
Using the methods of scanning force microscopy, the gas sensitivity properties of individual composite nanostructures based on CNTs, functionalized by argon ions and coated with tin and titanium oxides are investigated.
N. A. Davletkildeev   +2 more
doaj   +1 more source

Fermi Level Pinning Dependent 2D Semiconductor Devices: Challenges and Prospects

open access: yesAdvances in Materials, 2021
Motivated by the high expectation for efficient electrostatic modulation of charge transport at very low voltages, atomically thin 2D materials with a range of bandgaps are investigated extensively for use in future semiconductor devices.
Xiaochi Liu   +4 more
semanticscholar   +1 more source

Work Function and Electron Affinity of Semiconductors: Doping Effect and Complication due to Fermi Level Pinning

open access: yesEnergy & Environmental Materials, 2021
Semiconductors are a major category of functional materials essential to various applications to sustain the modern society. Most applied materials or devices utilizing semiconductors are enabled by interfaces or junctions, such as solar cells ...
G. Shao
semanticscholar   +1 more source

Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution. II. Modeling of characteristics

open access: yesФізика і хімія твердого тіла, 2022
The KKR (AkaiKKR software package) and FLAPW (Elk software package) methods were used to model the structural, thermodynamic, energetic, and electrokinetic characteristics of the Lu1-xZrxNiSb semiconductor solid solution.
V.A. Romaka   +6 more
doaj   +1 more source

Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution. I. Experimental results

open access: yesФізика і хімія твердого тіла, 2022
The effect of doping of half-Heusler phase p-LuNiSb (MgAgAs structure type) by Zr atoms on the structural, kinetic, energetic and magnetic characteristics of the semiconductor solid solution Lu1-xZrxNiSb was studied in the ranges: T = 80–400 K, x = 0–0 ...
V.A. Romaka   +6 more
doaj   +1 more source

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