Results 21 to 30 of about 334,237 (330)

Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution. II. Modeling of characteristics

Фізика і хімія твердого тіла, 2022
The KKR (AkaiKKR software package) and FLAPW (Elk software package) methods were used to model the structural, thermodynamic, energetic, and electrokinetic characteristics of the Lu1-xZrxNiSb semiconductor solid solution.
V.A. Romaka, Yu. Stadnyk, L. Romaka, V.V. Romaka, P. Demchenko, V. Pashkevich, А. Horyn   +6 more
doaj   +1 more source

RESTORATION OF PARTS MADE OF STEEL EI961-SH BY ELECTROLYTIC CHROME PLATING

Известия высших учебных заведений: Нефть и газ, 2015
The influence of the surface structure on the quality of chrome plating was studied. It was found that the quality of electrolytic plating depended on a difference in the thermo-e.m.f. value on the surface of the recovered part. A method was proposed for
I. M. Kovenski, S. V. Malysh
doaj   +1 more source

Investigation of thermoelectric material based on Lu1-xZrxNiSb solid solution. I. Experimental results

Фізика і хімія твердого тіла, 2022
The effect of doping of half-Heusler phase p-LuNiSb (MgAgAs structure type) by Zr atoms on the structural, kinetic, energetic and magnetic characteristics of the semiconductor solid solution Lu1-xZrxNiSb was studied in the ranges: T = 80–400 K, x = 0–0 ...
V.A. Romaka, Yu. Stadnyk, L. Romaka, А. Horyn, V. Pashkevich, H. Nychyporuk, P. Garanyuk   +6 more
doaj   +1 more source

Photo-Induced Unpinning of Fermi Level in WO3

Sensors, 2005
Atomic force and high resolution scanning tunneling analyses were carried out onnanostructured WO3 films. It turned out that the band gap measured by scanning tunnelingspectroscopy at surface is lower than the band gap reported in the literature.
Steve P. Wilks, Giorgio Sberveglieri, Giuliano Martinelli, Thierry G.G. Maffeis, Vincenzo Guidi, Alessio Giberti, Guido Faglia, Elisabetta Comini, Maria C. Carotta, Cesare Malagù   +9 more
doaj   +1 more source

Investigation of Ti1-xMoxCoSb Semiconducting Solid Solution

Фізика і хімія твердого тіла, 2020
The effect of doping of the TiCoSb compound (MgAgAs structure type) by Mo atoms on the features of the structural characteristics and behavior of the electrokinetic, energetic and magnetic properties of the Ti1-xMoxCoSb semiconducting solid solution (х = 
Yu. Stadnyk, V. Romaka, A. Нoryn, L. Romaka, V. Krayovskyy, I. Romaniv, M. Rokomanuk   +6 more
doaj   +1 more source

Composite fermi liquids in the lowest Landau level [PDF]

, 2016
We study composite fermi liquid (CFL) states in the lowest Landau level (LLL) limit at a generic filling $\nu = \frac{1}{n}$. We begin with the old observation that, in compressible states, the composite fermion in the lowest Landau level should be ...
Senthil, T., Wang, Chong
core   +2 more sources

A Molecular Platinum Cluster Junction: A Single-Molecule Switch [PDF]

, 2013
We present a theoretical study of the electronic transport through single-molecule junctions incorporating a Pt6 metal cluster bound within an organic framework.
Barraza-Lopez S., Bergfield J. P., Boardman B. M., Bokdam M., Cuevas J. C., de Biani F. F., Edmund Leary, Femoni C., Finch C. M., García-Lastra J. M., Georgiev V. P., Gerasimov Y. S., Gerasimov Y. S., Gubin S. P., Guedon C. M., Haiss W., Heersche H. B., Isomura N., Juan Carlos Cuevas, Juan Jose Palacios, Kaliginedi V., Leary E., Leary E., Leary E., Linda A. Zotti, Maria Soriano, Markussen T., Mayor M., Meded V., Nichols R. J., Park H., Park J., Renani F. R., Ruben M., Satanin A. M., Soldatov E. S., Wei Z., Yasumatsu H., Zhang J.   +38 more
core   +2 more sources

Role of the van Hove Singularity in the Quantum Criticality of the Hubbard Model [PDF]

, 2011
A quantum critical point (QCP), separating the non-Fermi liquid region from the Fermi liquid, exists in the phase diagram of the 2D Hubbard model [Vidhyadhiraja et. al, Phys. Rev. Lett. 102, 206407 (2009)].
A. C. Hewson, D. Galanakis, F. Steglich, G. Wiedemann, J. Moreno, K. Mikelsons, K.-S. Chen, M. Jarrell, R. Kubo, S. Pathak, S.-Q. Su, S.-X. Yang   +11 more
core   +3 more sources

An ambipolar transistor based on a monolayer WS2 using lithium ions injection

Materials Research Express, 2020
Ambipolar field-effect transistor (FET) devices based on two-dimensional (2D) materials have been attracted much attention due to potential applications in integrated circuits, flexible electronics and optical sensors.
Heshen Wang, Qiye Liu, Xuemeng Feng, Zhan Zhang, Kai Wang, Zhaojun Liu, Jun-Feng Dai   +6 more
doaj   +1 more source

Sixfold fermion near the Fermi level in cubic PtBi2

SciPost Physics, 2021
We show that the cubic compound PtBi2, is a topological semimetal hosting a sixfold band touching point in close proximity to the Fermi level. Using angle-resolved photoemission spectroscopy, we map the bandstructure of the system, which is in good ...
S. Thirupathaiah, Y. S. Kushnirenk, K. Koepernik, B. R. Piening, B. Buechner, S. Aswartham, J. van den Brink, S. V. Borisenko, I. C. Fulga
doaj   +1 more source