Results 21 to 30 of about 326,700 (334)
An ambipolar transistor based on a monolayer WS2 using lithium ions injection
Materials Research Express, 2020 Ambipolar field-effect transistor (FET) devices based on two-dimensional (2D) materials have been attracted much attention due to potential applications in integrated circuits, flexible electronics and optical sensors.
Heshen Wang +6 more
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Фізика і хімія твердого тіла, 2020 Peculiarities of the structural, electrokinetic, energetic, and magnetic characteristics of Er1-xZrxNiSb semiconductive solid solution, х=0–0.10, were studied.
V.A. Romaka +6 more
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Фізика і хімія твердого тіла, 2022 The effect of doping of half-Heusler phase p-LuNiSb (MgAgAs structure type) by Zr atoms on the structural, kinetic, energetic and magnetic characteristics of the semiconductor solid solution Lu1-xZrxNiSb was studied in the ranges: T = 80–400 K, x = 0–0 ...
V.A. Romaka +6 more
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Fermi Level Position at Semiconductor Surfaces [PDF]
Physical Review Letters, 1963 There have been several recent reports of barrier height studies on metal-semiconductor interfaces. Metals of widely different work functions evaporated onto Si and GaAs surfaces indicated that in each case the energy difference between the semiconductor conduction band edge and Fermi level at the interface,φ_(Bn), was essentially independent of the
Mead, C. A., Spitzer, W. G.
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Mechanism of Fermi-level stabilization in semiconductors [PDF]
Physical Review B, 1988 A striking correlation between the Fermi level in heavily radiation damaged semiconductors and at metal-semiconductor interfaces is presented. The correlation provides critical evidence supporting the defect model for Schottky-barrier formation. The Fermi-level energy for both situations corresponds to the average energy of the ${\mathrm{sp}}^{3 ...
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Sixfold fermion near the Fermi level in cubic PtBi2
SciPost Physics, 2021 We show that the cubic compound PtBi2, is a topological semimetal hosting a sixfold band touching point in close proximity to the Fermi level. Using angle-resolved photoemission spectroscopy, we map the bandstructure of the system, which is in good ...
S. Thirupathaiah, Y. S. Kushnirenk, K. Koepernik, B. R. Piening, B. Buechner, S. Aswartham, J. van den Brink, S. V. Borisenko, I. C. Fulga
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A Molecular Platinum Cluster Junction: A Single-Molecule Switch [PDF]
, 2013 We present a theoretical study of the electronic transport through single-molecule junctions incorporating a Pt6 metal cluster bound within an organic framework.
Barraza-Lopez S. +38 more
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Graphene-based tunable linear and linear-to-circular polarization converters in the THz band
Results in Physics, 2022 A switchable and tunable reflective terahertz (THz) polarization converter based on graphene metamaterial is designed and analyzed. By changing the Fermi energy level of graphene, the converter can achieve broadband linear polarization conversion (LPC ...
Xueguang Yuan +5 more
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Anomalous self-energy and Fermi surface quasi-splitting in the vicinity of a ferromagnetic instability [PDF]
, 2004 We discuss the low-temperature behavior of the electronic self-energy in the vicinity of a ferromagnetic instability in two dimensions within the two-particle self-consistent approximation, functional renormalization group and Ward-identity approaches ...
A. A. Abrikosov +17 more
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Asymptotic Pomeranchuk instability of Fermi liquids in half-filled Landau levels
Scientific Reports, 2023 We present a theory of spontaneous Fermi surface deformations for half-filled Landau levels (filling factors of the form $$\nu =2 \, n+1/2$$ ν = 2 n + 1 / 2 ).
Jorge Quintanilla, Orion Ciftja
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