Results 291 to 300 of about 326,700 (334)
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Level density of degenerate Fermi systems
Nuclear Physics, 1958Abstract Model independent expressions for the level density of systems of non-interacting Fermions are given in a form that is suitable for treating degenerate systems. No formal distinction is made between discrete and continuous distribution of the single Fermion states.
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Theory of the Fermi-level energy in semiconductor superlattices
Physical Review B, 1991A theoretical study of the properties of the Fermi level in semiconductor superlattices (SL's) is made which is based upon the carrier occupation of the minibands in thermal equilibrium. We find, for a fixed carrier density and temperature, that the SL Fermi level can differ significantly from that obtained using commonly employed three-dimensional ...
James H. Luscombe +7 more
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Stabilization of the Fermi level in photochromic glasses
Philosophical Magazine B, 1984Abstract Photochromic glasses doped with thallium, iodide and cadmium have been found not to show the superlinear relationship between equilibrium darkening and excitation intensity which was reported previously for undoped photochromic glasses.
D. A. Nolan +2 more
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Fermi Level in Amorphous Antimony Films
Physical Review, 1954Films of antimony were deposited by evaporation on interchangeable emitters in concentric-sphere, retarding-potential phototubes. Below thicknesses of about 300 A, they behaved as semiconductors. The Fermi level lay about 0.1 ev above the occupied band.
L. Apker, E. Taft
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Fermi-Level Pinning in Nanocrystal Memories
IEEE Electron Device Letters, 2007The nanocrystal (NC) work-function engineering, which plays an important role on the NC memory characteristics such as memory window and retention time, were long regarded as a matter of choice on NC materials. In this letter, we report opposite polarities of charge storage in Au NC memories with different control oxides. The effective NC work function
Tuo-Hung Hou +2 more
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Fermi level, work function and vacuum level
Materials Horizons, 2016Electronic levels and energies of a solid, such as Fermi level, vacuum level, work function, ionization energy or electron affinity, are of paramount importance for the control of device behavior, charge carrier injection and transport.
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Adsorption-induced Fermi level pinning
Physics of the Solid State, 2008The adsorption-induced Fermi level pinning is shown to occur at the coverages Θ* corresponding to a shallow extremum or saturation of the work function of the system. Equations for Θ* are derived within a modified Anderson-Newns adsorption model. Experimental data on the adsorption of atoms of alkali, alkaline-earth (Ba), and rare-earth metals and ...
S. Yu. Davydov, S. V. Troshin
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Unpinning of the Fermi Level on GaAs by Flowing Water.
Applied Physics Letters, 1987Unpinning of the Fermi level on GaAs (100) surfaces by photochemical reactions resulting from simultaneous exposure of specimens to flowing water and light was recently reported. We discuss here a series of experiments carried out to provide further information on the changes in surface electronic structure responsible for unpinning of the Fermi level ...
Gary W. Stupian +2 more
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An apparent paradox in the thermodynamics of Fermi levels
Solid State Communications, 1985Abstract We consider what happens when two metal plates having different work functions approach one another. If they are connected by a wire the plates will do work and build up an electric field in the space between them. The system does work even though the electron Fermi level is the same throughout.
Albert Rose, Richard Williams
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Fermi level stabilization at semiconductor surfaces
Surface Science, 1965Abstract Photoelectric measurements have been carried out on silicon single crystals covered with small amounts of indium. It turns out that for low stages of coverage the only effect of the indium on the photoemission is a parallel shift of the whole spectral yield curve to lower energy.
J.J. Scheer, J. van Laar
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